MT29F2G08ABAEAWP-IT:E TR

Product Overview

Category

The MT29F2G08ABAEAWP-IT:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G08ABAEAWP-IT:E TR offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures reliable data retention and endurance, making it suitable for long-term use.
• Low power consumption: The MT29F2G08ABAEAWP-IT:E TR is designed to consume minimal power, enhancing the overall energy efficiency of the device it is integrated into.

Package

The MT29F2G08ABAEAWP-IT:E TR comes in a compact and durable package, ensuring protection against physical damage and environmental factors. The specific package type may vary depending on the manufacturer's specifications.

Essence

As an essential component of electronic devices, NAND flash memory provides non-volatile storage capabilities, allowing users to store and retrieve data reliably.

Packaging/Quantity

The MT29F2G08ABAEAWP-IT:E TR is typically packaged in reels or trays, depending on the manufacturer's packaging standards. The quantity per package may vary, but it is commonly available in bulk quantities to meet the demands of large-scale production.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F2G08ABAEAWP-IT:E TR
• Memory Type: NAND Flash
• Storage Capacity: 2GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)

Detailed Pin Configuration

The MT29F2G08ABAEAWP-IT:E TR features a specific pin configuration for proper integration into electronic devices. The following table outlines the pin assignments and their corresponding functions:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | RE# | Read Enable | | 7 | WE# | Write Enable | | 8 | R/B# | Ready/Busy Status | | 9-16 | IO0-IO7 | Data Input/Output |

Functional Features

• High-speed data transfer: The MT29F2G08ABAEAWP-IT:E TR offers fast read and write operations, enabling efficient data transfer between the memory and the host device.
• Error correction: This NAND flash memory incorporates advanced error correction techniques, ensuring data integrity and reliability.
• Wear leveling: The product employs wear-leveling algorithms to distribute data evenly across memory blocks, extending the lifespan of the memory.
• Bad block management: The MT29F2G08ABAEAWP-IT:E TR includes built-in mechanisms to identify and manage bad blocks, enhancing overall storage efficiency.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to alternative storage solutions

Working Principles

The MT29F2G08ABAEAWP-IT:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electrons within floating gate transistors. When reading data, the charge level of each cell is measured to determine the stored information. During writing, the trapped electrons are either removed or added to modify the charge level, allowing for data storage or erasure.

Detailed Application Field Plans

The MT29F2G08ABAEAWP-IT:E TR finds application in various electronic devices that require reliable and high-capacity data storage. Some specific application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage space for apps, media files, and user data.
2. Digital cameras: Enables storing high-resolution