Micron Technology Inc.
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MT29F2G01ABBGDWB-IT:G

MT29F2G01ABBGDWB-IT:G

Product Overview

Category

MT29F2G01ABBGDWB-IT:G belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

The MT29F2G01ABBGDWB-IT:G comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F2G01ABBGDWB-IT:G is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Storage Capacity: 2GB
  • Interface: NAND
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)

Detailed Pin Configuration

The MT29F2G01ABBGDWB-IT:G has a standard pin configuration as follows:

  1. VCC - Power supply voltage
  2. GND - Ground
  3. CE - Chip enable
  4. RE - Read enable
  5. WE - Write enable
  6. A0-A18 - Address lines
  7. DQ0-DQ15 - Data input/output lines
  8. R/B - Ready/busy status
  9. CLE - Command latch enable
  10. ALE - Address latch enable

Functional Features

  • Block Erase: The MT29F2G01ABBGDWB-IT:G supports block erase operations, allowing for efficient data management.
  • Page Program: It enables fast and reliable programming of data at the page level.
  • Error Correction Code (ECC): This feature ensures data integrity by detecting and correcting errors during read and write operations.
  • Wear Leveling: The NAND flash memory employs wear leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast read and write speeds enhance overall system performance.
  • Compact size enables integration into small electronic devices.
  • Low power consumption prolongs battery life in portable devices.

Disadvantages

  • Limited endurance compared to other types of non-volatile memory.
  • Relatively higher cost per gigabyte compared to traditional hard drives.

Working Principles

The MT29F2G01ABBGDWB-IT:G utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the appropriate voltage levels are applied to the memory cells, and during read operations, the stored voltage levels are interpreted to retrieve the data.

Detailed Application Field Plans

The MT29F2G01ABBGDWB-IT:G finds applications in various fields, including: 1. Mobile devices: Smartphones, tablets, and portable media players. 2. Digital cameras: Used for storing photos and videos. 3. Solid-state drives (SSDs): Provides high-speed storage for computers and servers. 4. Automotive electronics: Used for infotainment systems, navigation, and data logging. 5. Industrial equipment: Embedded systems, control units, and data storage devices.

Detailed and Complete Alternative Models

  1. MT29F2G08ABAEAWP-IT:G
  2. MT29F2G16ABBEAH4-IT:G
  3. MT29F2G32ABBEAH4-IT:G
  4. MT29F2G64ABBEAH4-IT:G
  5. MT29F2G128ABBEAH4-IT:G

These alternative models offer similar functionality and characteristics to the MT29F2G01ABBGDWB-IT:G, but with varying storage capacities and specifications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F2G01ABBGDWB-IT:G v technických řešeních

1. What is the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G has a capacity of 2 gigabytes (GB).

3. What is the interface used by the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G uses a standard NAND flash interface.

4. What are some common applications for the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G is commonly used in various technical solutions such as embedded systems, consumer electronics, automotive applications, and industrial devices.

5. What is the operating voltage range of the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G operates within a voltage range of 2.7V to 3.6V.

6. What is the maximum data transfer rate of the MT29F2G01ABBGDWB-IT:G?

The MT29F2G01ABBGDWB-IT:G supports a maximum data transfer rate of up to 52 megabytes per second (MB/s).

7. Does the MT29F2G01ABBGDWB-IT:G support wear-leveling algorithms?

Yes, the MT29F2G01ABBGDWB-IT:G supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells, prolonging the lifespan of the chip.

8. Can the MT29F2G01ABBGDWB-IT:G operate in extreme temperature conditions?

Yes, the MT29F2G01ABBGDWB-IT:G is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

9. Is the MT29F2G01ABBGDWB-IT:G compatible with various operating systems?

Yes, the MT29F2G01ABBGDWB-IT:G is compatible with different operating systems, including Linux, Windows, and various real-time operating systems (RTOS).

10. Are there any specific programming requirements for the MT29F2G01ABBGDWB-IT:G?

Yes, the MT29F2G01ABBGDWB-IT:G requires specific programming techniques and commands to read, write, and erase data due to its NAND flash architecture. The datasheet provided by Micron Technology contains detailed information on the programming requirements.