Micron Technology Inc.
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MT29F2G01ABBGDSF-IT:G TR

MT29F2G01ABBGDSF-IT:G TR

Product Overview

Category

MT29F2G01ABBGDSF-IT:G TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F2G01ABBGDSF-IT:G TR offers a storage capacity of 2GB.
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F2G01ABBGDSF-IT:G TR is packaged in a small outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity, usually around 1000 units per reel.

Specifications

  • Storage Capacity: 2GB
  • Interface: NAND
  • Supply Voltage: 3.3V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)
  • Endurance: Up to 100,000 program/erase cycles
  • Package Type: SOIC

Detailed Pin Configuration

The MT29F2G01ABBGDSF-IT:G TR has a standard pin configuration as follows:

  1. VCC (Power Supply)
  2. CE (Chip Enable)
  3. CLE (Command Latch Enable)
  4. ALE (Address Latch Enable)
  5. RE (Read Enable)
  6. WE (Write Enable)
  7. R/B (Ready/Busy)
  8. DQ0-DQ7 (Data Input/Output)

Functional Features

  • Block Erase: The NAND flash memory supports block erase operations, allowing for efficient data management.
  • Page Program: It enables the programming of data at the page level, facilitating flexible data storage.
  • Read and Write Operations: The product provides fast read and write operations, ensuring quick access to stored data.
  • Error Correction: Advanced error correction techniques are implemented to enhance data integrity and reliability.
  • Wear Leveling: The NAND flash memory incorporates wear leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact form factor

Disadvantages

  • Limited endurance compared to other non-volatile memory technologies
  • Sensitive to electrical noise and voltage fluctuations

Working Principles

The MT29F2G01ABBGDSF-IT:G TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized into blocks and pages. Each cell can store multiple bits of information using a floating-gate transistor structure. Data is written by applying appropriate voltages to the memory cells, and it can be read by sensing the voltage levels stored in the cells.

Detailed Application Field Plans

The MT29F2G01ABBGDSF-IT:G TR finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

  1. Smartphones and tablets
  2. Digital cameras
  3. Solid-state drives (SSDs)
  4. Portable media players
  5. Automotive infotainment systems
  6. Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F2G08ABAEAWP-IT:G TR - 8GB NAND flash memory with similar specifications.
  2. MT29F4G16ABCHC-ET:C TR - 4GB NAND flash memory with enhanced performance features.
  3. MT29F16G08CBACAWP-IT:C TR - 16GB NAND flash memory offering higher storage capacity.

These alternative models provide different storage capacities and performance characteristics, allowing users to choose the most suitable option for their specific requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F2G01ABBGDSF-IT:G TR v technických řešeních

1. What is the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR has a capacity of 2 gigabytes (GB).

3. What is the interface of the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR uses a standard NAND flash interface.

4. What are some common applications for the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR is commonly used in various technical solutions such as embedded systems, solid-state drives (SSDs), industrial automation, and automotive electronics.

5. What is the operating voltage range of the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR operates within a voltage range of 2.7V to 3.6V.

6. What is the data transfer rate of the MT29F2G01ABBGDSF-IT:G TR?

The MT29F2G01ABBGDSF-IT:G TR has a maximum data transfer rate of up to 52 megabytes per second (MB/s).

7. Does the MT29F2G01ABBGDSF-IT:G TR support wear-leveling algorithms?

Yes, the MT29F2G01ABBGDSF-IT:G TR supports wear-leveling algorithms, which help distribute data evenly across the memory cells to extend the lifespan of the flash memory.

8. Is the MT29F2G01ABBGDSF-IT:G TR compatible with various operating systems?

Yes, the MT29F2G01ABBGDSF-IT:G TR is compatible with different operating systems, including Windows, Linux, and various real-time operating systems (RTOS).

9. Can the MT29F2G01ABBGDSF-IT:G TR withstand harsh environmental conditions?

Yes, the MT29F2G01ABBGDSF-IT:G TR is designed to operate reliably in harsh environmental conditions, including wide temperature ranges and high levels of shock and vibration.

10. Does the MT29F2G01ABBGDSF-IT:G TR support hardware encryption?

No, the MT29F2G01ABBGDSF-IT:G TR does not have built-in hardware encryption capabilities. Encryption would need to be implemented at the software level if required.