MT29F256G08EECBBJ4-6:B

Product Overview

Category

MT29F256G08EECBBJ4-6:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08EECBBJ4-6:B offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08EECBBJ4-6:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F256G08EECBBJ4-6:B is typically packaged in a surface-mount technology (SMT) package. It is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory type: NAND flash
• Storage capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage supply: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Package dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F256G08EECBBJ4-6:B has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE# /#RE: Chip enable input
4. CLE: Command latch enable input
5. ALE: Address latch enable input
6. WP#/ACC: Write protect input
7. R/B#: Ready/Busy output
8. DQ0-DQ7: Data input/output lines
9. DQS: Data strobe input/output
10. DM: Data mask input/output
11. NC: No connection

Functional Features

• Page read and program operations: The MT29F256G08EECBBJ4-6:B supports efficient page read and program operations, allowing for quick data access and storage.
• Block erase: This NAND flash memory enables block erase operations, facilitating the deletion of large amounts of data in a single operation.
• Error correction code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability by detecting and correcting errors during read and write operations.
• Wear leveling: The MT29F256G08EECBBJ4-6:B implements wear-leveling techniques to distribute data evenly across memory blocks, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08EECBBJ4-6:B utilizes NAND flash memory technology, which stores data in memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data, typically two or more. The data is written to and read from the memory cells using electrical charges.

During write operations, the memory cells are programmed by applying appropriate voltage levels to the control pins. Conversely, during read operations, the stored data is retrieved by sensing the electrical charges in the memory cells.

Detailed Application Field Plans

The MT29F256G08EECBBJ4-6:B finds applications in various electronic devices that require high-capacity data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F256G08AUCBBH3-12IT: Similar NAND flash memory with a storage capacity of 256 GB, UFS interface, and extended temperature range.
2. MT29F256G08AUEDBH4-10IT: NAND flash memory with a storage capacity of 256 GB, UFS interface, enhanced data protection features, and extended temperature range. 3