MT29F256G08EBHAFJ4-3R:A TR

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Model: MT29F256G08EBHAFJ4-3R:A TR
• Capacity: 256GB
• Interface: NAND Flash
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 200MB/s (Read), Up to 100MB/s (Write)

Detailed Pin Configuration

The MT29F256G08EBHAFJ4-3R:A TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer
• Reliable and durable
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Power-saving features

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact size
• Wide operating temperature range

Disadvantages

• Relatively high cost compared to other memory devices
• Limited write endurance

Working Principles

The MT29F256G08EBHAFJ4-3R:A TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltage to specific memory cells. The device utilizes various algorithms and error correction techniques to ensure data integrity and reliability.

Detailed Application Field Plans

The MT29F256G08EBHAFJ4-3R:A TR is widely used in various applications, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the MT29F256G08EBHAFJ4-3R:A TR include: - Samsung K9F2G08U0C - Micron MT29F256G08CBABA - Toshiba TH58NVG6D2FLA89 - Intel JS29F256G08CAMD1

(Note: This list is not exhaustive and there may be other alternative models available in the market.)

This entry provides an overview of the MT29F256G08EBHAFJ4-3R:A TR memory device, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.