MT29F256G08CMHGBJ4-3RES:G TR

Product Overview

Category

The MT29F256G08CMHGBJ4-3RES:G TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CMHGBJ4-3RES:G TR offers a storage capacity of 256 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product ensures reliable performance with its robust design and built-in error correction mechanisms.
• Low power consumption: The MT29F256G08CMHGBJ4-3RES:G TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This NAND flash memory comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F256G08CMHGBJ4-3RES:G TR is typically packaged in a surface-mount package (SMT) format. The exact package dimensions and pin configuration are detailed below. It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Type: Surface-mount package (SMT)

Pin Configuration

The detailed pin configuration of the MT29F256G08CMHGBJ4-3RES:G TR is as follows:

1. VCC - Power Supply
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Inputs/Outputs
8. R/B - Ready/Busy Status
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable
11. WP - Write Protect
12. RST - Reset

Please refer to the product datasheet for a complete pinout diagram.

Functional Features

• Page Program: The MT29F256G08CMHGBJ4-3RES:G TR supports page-level programming, allowing data to be written in small increments.
• Block Erase: It provides block-level erase functionality, enabling efficient removal of unwanted data.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: The product employs wear leveling techniques to distribute write operations evenly across memory blocks, prolonging its lifespan.
• Bad Block Management: It includes mechanisms to identify and manage defective blocks, preventing their use for data storage.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures data integrity.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance compared to some alternative memory technologies.

Working Principles

The MT29F256G08CMHGBJ4-3RES:G TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. Data is written to and read from the memory cells using electrical charges. The control signals provided through the pin configuration enable various operations such as reading, writing, erasing, and addressing.

Detailed Application Field Plans

The MT29F256G08CMHGBJ4-3RES:G TR finds applications in a wide range of electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Solid-state drives (SSDs)
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices
8. Gaming consoles

These are just a few examples, and the versatility of this NAND flash memory allows it to be used in numerous other electronic devices.

Detailed and Complete Alternative Models

1. Samsung K9