MT29F256G08CMEDBJ5-12IT:D TR

Product Overview

Category

MT29F256G08CMEDBJ5-12IT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CMEDBJ5-12IT:D TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CMEDBJ5-12IT:D TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a small form factor, making it suitable for integration into compact electronic devices.

Package and Quantity

The MT29F256G08CMEDBJ5-12IT:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Part Number: MT29F256G08CMEDBJ5-12IT:D TR
• Memory Type: NAND Flash
• Storage Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)
• Package Dimensions: [Insert dimensions]
• Manufacturer: [Insert manufacturer]

Detailed Pin Configuration

The MT29F256G08CMEDBJ5-12IT:D TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B# - Ready/Busy status
9. CLE - Command latch enable
10. ALE - Address latch enable
11. WP# - Write protect
12. RST# - Reset

Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete and accurate pinout information.

Functional Features

• High-speed data transfer: The MT29F256G08CMEDBJ5-12IT:D TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: The product incorporates advanced error correction techniques to ensure data integrity and minimize data loss.
• Wear leveling: To extend the lifespan of the NAND flash memory, wear leveling algorithms are implemented, distributing write operations evenly across memory cells.
• Bad block management: The MT29F256G08CMEDBJ5-12IT:D TR includes a mechanism to identify and manage bad blocks, ensuring reliable operation even in the presence of defective memory cells.
• Security features: Some versions of this product may include built-in security features such as hardware encryption and secure erase functionality, enhancing data protection.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Relatively higher cost compared to other storage technologies
• Limited endurance (limited number of write cycles)

Working Principles

The MT29F256G08CMEDBJ5-12IT:D TR utilizes NAND flash memory technology. It consists of a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks, with each block containing multiple pages.

During write operations, data is programmed into the memory cells by applying appropriate voltage levels. Reading data involves sensing the electrical charge stored in the cells. The controller manages the read, write, and erase operations, ensuring proper data management and error correction.

Detailed Application Field Plans

The MT29F256G08CMEDBJ5-12IT:D TR finds application in various electronic devices that require high-capacity data storage. Some of the key application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data in mobile devices.
2. Digital cameras: High-resolution images