MT29F256G08CECEBJ4-37ITRES:E TR

Product Overview

Category

MT29F256G08CECEBJ4-37ITRES:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CECEBJ4-37ITRES:E TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CECEBJ4-37ITRES:E TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F256G08CECEBJ4-37ITRES:E TR is packaged in a surface mount package (SMT) with 48 pins. It is available in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F256G08CECEBJ4-37ITRES:E TR has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CLE - Command latch enable
5. ALE - Address latch enable
6. CE# - Chip enable
7. RE# - Read enable
8. WE# - Write enable
9. R/B# - Ready/Busy status
10. DQ0-DQ15 - Data input/output

(Note: The remaining pins are not listed for brevity.)

Functional Features

• Page Program: Allows data to be written into the memory cells in page-level increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides fast random access to stored data, facilitating quick retrieval.
• Wear-Leveling: Implements wear-leveling algorithms to evenly distribute write and erase operations, prolonging the lifespan of the memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package enables integration into small-sized devices.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• Relatively high cost compared to other types of memory.
• Limited endurance due to a finite number of erase/program cycles.

Working Principles

The MT29F256G08CECEBJ4-37ITRES:E TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. The presence or absence of electrons determines the binary state (0 or 1) of each cell, representing stored data. Data can be written to and read from the memory cells using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F256G08CECEBJ4-37ITRES:E TR is widely used in various electronic devices that require high-capacity data storage. Some application fields include:

1. Smartphones and tablets: Provides ample storage for apps, media files, and user data.
2. Digital cameras: Enables storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): Serves as primary storage in SSDs, offering fast and reliable data access.

Alternative Models

For those seeking alternative models with similar specifications and features, the following options are available:

1. MT29F256G08CECEBJ4-37ITR
2. MT29F256G08CECEBJ4-37ITRE
3. MT29F256G08CECEBJ4-37ITR:E

These models offer comparable performance and compatibility with various electronic devices