MT29F256G08CECEBJ4-37ITRES:E

Product Overview

Category

The MT29F256G08CECEBJ4-37ITRES:E belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CECEBJ4-37ITRES:E offers a storage capacity of 256 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CECEBJ4-37ITRES:E is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F256G08CECEBJ4-37ITRES:E is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 256 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Input/Output
8. R/B: Ready/Busy
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data in block-sized units.
• Read Operation: Facilitates the retrieval of stored data.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory blocks, extending the product's lifespan.
• Error Correction Code (ECC): Provides error detection and correction capabilities, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08CECEBJ4-37ITRES:E utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The device operates based on a series of commands and addresses provided through the interface.

Detailed Application Field Plans

The MT29F256G08CECEBJ4-37ITRES:E finds applications in various electronic devices that require high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F256G08CECEBJ4-37ITRES:F
2. MT29F256G08CECEBJ4-37ITRES:G
3. MT29F256G08CECEBJ4-37ITRES:H
4. MT29F256G08CECEBJ4-37ITRES:I

These alternative models offer similar specifications and functionality, providing options for different requirements and preferences.

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