MT29F256G08CBCBBWP-10ES:B TR

Product Overview

Category

MT29F256G08CBCBBWP-10ES:B TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CBCBBWP-10ES:B TR offers a storage capacity of 256 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: The product is designed to consume minimal power, making it suitable for portable devices.
• Compact package: The MT29F256G08CBCBBWP-10ES:B TR comes in a small form factor, enabling easy integration into various devices.

Package and Quantity

The MT29F256G08CBCBBWP-10ES:B TR is typically packaged in a surface-mount ball grid array (BGA) package. The exact quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F256G08CBCBBWP-10ES:B TR
• Memory Type: NAND Flash
• Capacity: 256 GB
• Interface: Parallel or Serial
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration for the MT29F256G08CBCBBWP-10ES:B TR can be found in the datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Block Erase: The MT29F256G08CBCBBWP-10ES:B TR supports block erase operations, allowing for efficient management of stored data.
• Page Program: It enables users to write data in page-sized increments, facilitating flexible data storage.
• Read/Write Operations: The product allows for high-speed read and write operations, ensuring quick access to stored information.
• Error Correction Code (ECC): ECC functionality is incorporated to enhance data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Relatively higher cost compared to other types of memory technologies.
• Limited endurance compared to some alternative non-volatile memory solutions.

Working Principles

The MT29F256G08CBCBBWP-10ES:B TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The device operates based on the principles of electrical charge manipulation within the memory cells.

Detailed Application Field Plans

The MT29F256G08CBCBBWP-10ES:B TR finds application in various fields, including: 1. Consumer Electronics: Smartphones, tablets, digital cameras, portable media players. 2. Computing: Solid-state drives (SSDs), embedded systems, industrial computers. 3. Automotive: Infotainment systems, navigation devices, advanced driver-assistance systems (ADAS). 4. Networking: Routers, switches, network storage devices. 5. Industrial: Automation equipment, control systems, medical devices.

Detailed and Complete Alternative Models

1. MT29F256G08AUCBBWP-10ES
2. MT29F256G08CJABBWP-10ES
3. MT29F256G08CUABBWP-10ES
4. MT29F256G08CZABBWP-10ES
5. MT29F256G08EEABBWP-10ES

These alternative models offer similar specifications and functionality to the MT29F256G08CBCBBWP-10ES:B TR, providing options for different application requirements.

Note: The content provided above is a sample entry and may not reflect actual product details.