MT29F256G08CBCBBWP-10:B TR

Basic Information Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics:
- Non-volatile
- High capacity
- Fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: Flash memory chip
Packaging/Quantity: Bulk packaging, typically sold in reels or trays

Specifications

Model: MT29F256G08CBCBBWP-10:B TR
Capacity: 256GB
Organization: 8Gb x 32
Voltage Supply: 2.7V - 3.6V
Access Time: 100ns
Interface: Parallel NAND
Operating Temperature: -40°C to +85°C
RoHS Compliant: Yes

Detailed Pin Configuration

The MT29F256G08CBCBBWP-10:B TR has a total of 48 pins. The pin configuration is as follows:

VCC
ALE
CLE
RE#
WE#
WP#
R/B#
CE#
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND

Functional Features

High-speed data transfer
Reliable and durable storage
Low power consumption
Error correction capabilities
Block erase and program operations

Advantages

Large storage capacity
Fast read/write speeds
Compact package size
Wide operating temperature range
RoHS compliant

Disadvantages

Higher cost compared to other memory options
Limited endurance (limited number of erase/write cycles)

Working Principles

The MT29F256G08CBCBBWP-10:B TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is accessed by sending specific commands and addresses to the chip, which then retrieves or writes the requested data.

Detailed Application Field Plans

The MT29F256G08CBCBBWP-10:B TR is commonly used in various electronic devices that require large-capacity non-volatile storage. Some application fields include: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive infotainment systems

Detailed and Complete Alternative Models

MT29F256G08CBABA
MT29F256G08CBABB
MT29F256G08CBABC
MT29F256G08CBABD

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F256G08CBCBBWP-10:B TR v technických řešeních

1. What is the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR has a storage capacity of 256 gigabits (32 gigabytes).

3. What is the operating voltage range for the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR operates within a voltage range of 2.7V to 3.6V.

4. What is the maximum data transfer rate supported by the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR supports a maximum data transfer rate of 100 megabytes per second.

5. What is the interface used by the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR uses a standard 8-bit parallel interface.

6. Is the MT29F256G08CBCBBWP-10:B TR compatible with various operating systems?

Yes, the MT29F256G08CBCBBWP-10:B TR is compatible with various operating systems, including Windows, Linux, and embedded systems.

7. Can the MT29F256G08CBCBBWP-10:B TR be used in industrial applications?

Yes, the MT29F256G08CBCBBWP-10:B TR is suitable for use in industrial applications due to its high reliability and endurance.

8. Does the MT29F256G08CBCBBWP-10:B TR support hardware encryption?

No, the MT29F256G08CBCBBWP-10:B TR does not have built-in hardware encryption capabilities.

9. What is the temperature range for the MT29F256G08CBCBBWP-10:B TR?

The MT29F256G08CBCBBWP-10:B TR operates within a temperature range of -40°C to +85°C.

10. Can the MT29F256G08CBCBBWP-10:B TR be used in automotive applications?

Yes, the MT29F256G08CBCBBWP-10:B TR is suitable for use in automotive applications as it meets the required specifications and can withstand harsh operating conditions.