MT29F256G08CBCBBJ4-5M:B

Product Overview

Category

MT29F256G08CBCBBJ4-5M:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CBCBBJ4-5M:B offers a storage capacity of 256 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life in portable devices.
• Compact package: The MT29F256G08CBCBBJ4-5M:B comes in a compact package, making it suitable for integration into small form factor devices.
• Durable design: This NAND flash memory is built to withstand harsh environmental conditions, including temperature variations and mechanical shocks.

Packaging/Quantity

The MT29F256G08CBCBBJ4-5M:B is typically packaged in a surface-mount technology (SMT) package. It is available in bulk quantities for industrial applications.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F256G08CBCBBJ4-5M:B has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: The MT29F256G08CBCBBJ4-5M:B supports page programming, allowing data to be written in small increments.
• Block Erase: It provides block erase functionality, enabling the erasure of large chunks of data for efficient memory management.
• Read and Write Operations: This NAND flash memory allows fast read and write operations, facilitating quick access to stored data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables users to store a large amount of data.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance with low power consumption.
• Compact package suitable for integration into small form factor devices.
• Durable design withstands harsh environmental conditions.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08CBCBBJ4-5M:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a high voltage to the control gate, allowing electrons to tunnel through the insulating layer and modify the charge on the floating gate.

Detailed Application Field Plans

The MT29F256G08CBCBBJ4-5M:B is widely used in various electronic devices, including: - Smartphones and tablets for data storage and app execution. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. - Automotive systems for storing firmware, maps, and other critical data. - Industrial applications where ruggedness and reliability are essential.

Alternative Models

• MT29F128G08CFAAAWP
• MT29F512G08CKCABH7
• MT29F1T08EMHAFJ4-IT:E

These alternative models offer different storage capacities and features to cater to diverse application requirements.

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