MT29F256G08CBCBBJ4-37ES:B TR

Product Overview

Category

MT29F256G08CBCBBJ4-37ES:B TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CBCBBJ4-37ES:B TR offers a storage capacity of 256 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Low power consumption: The product is designed to consume minimal power, making it suitable for portable devices.
• Compact package: It comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F256G08CBCBBJ4-37ES:B TR is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Model: MT29F256G08CBCBBJ4-37ES:B TR
• Storage Capacity: 256 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMD
• Pin Count: 48

Detailed Pin Configuration

The MT29F256G08CBCBBJ4-37ES:B TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. A0
8. A1
9. A2
10. A3
11. A4
12. A5
13. A6
14. A7
15. A8
16. A9
17. A10
18. A11
19. A12
20. A13
21. A14
22. A15
23. A16
24. A17
25. A18
26. A19
27. A20
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer: The MT29F256G08CBCBBJ4-37ES:B TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes a bad block management system that identifies and isolates defective blocks, preventing data corruption.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance (limited number of program/erase cycles)

Working Principles

The MT29F256G08CBCBBJ4-37ES:B TR utilizes NAND flash memory technology. It consists of a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks.

During write operations, the memory cells are programmed by applying voltage to specific cells, altering their electrical state. Reading involves detecting the electrical state of the cells to retrieve stored data.

The NAND flash memory operates on the principle of floating-gate transistors, where charge is trapped in the floating gate to represent data. The presence or absence of charge determines the binary value of each memory cell.

Detailed Application Field Plans

The MT29F256G08CBCBBJ4-37ES:B TR finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Solid-state drives (SSDs) 4. Portable media players 5. Automotive infotainment systems 6. Industrial control systems 7. Embedded systems

Detailed and Complete Alternative Models

1. MT29F256G08CBABA: This model offers similar specifications and features as the