MT29F256G08AUCDBJ6-6IT:D TR

Product Overview

Category

MT29F256G08AUCDBJ6-6IT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AUCDBJ6-6IT:D TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life.
• Durable design: The MT29F256G08AUCDBJ6-6IT:D TR is built to withstand harsh environmental conditions, making it suitable for use in rugged devices.

Package and Quantity

The MT29F256G08AUCDBJ6-6IT:D TR is available in a compact surface-mount package. It is typically sold in reels containing a specific quantity, usually ranging from 100 to 1000 units per reel.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F256G08AUCDBJ6-6IT:D TR
• Memory Type: NAND Flash
• Storage Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Pin Configuration

The detailed pin configuration of the MT29F256G08AUCDBJ6-6IT:D TR is as follows:

1. VCC
2. VCCQ
3. R/B#
4. CE#
5. CLE
6. ALE
7. WP#
8. RE#
9. RESET#
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. GND
45. GND
46. DQS
47. DQ[0:7]
48. NC

Functional Features

• Error Correction Code (ECC): The MT29F256G08AUCDBJ6-6IT:D TR incorporates advanced ECC algorithms to ensure data integrity and minimize errors during read and write operations.
• Wear-Leveling: This feature evenly distributes data writes across memory blocks, extending the lifespan of the NAND flash memory.
• Bad Block Management: The product includes mechanisms to identify and manage bad blocks, ensuring reliable operation even in the presence of defective memory cells.
• Power Loss Protection: In case of sudden power loss, the MT29F256G08AUCDBJ6-6IT:D TR employs power loss protection mechanisms to prevent data corruption and maintain data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with low power consumption.
• Durable design suitable for rugged environments.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08AUCDBJ6-6IT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a specific voltage to the cell, altering the charge level and thus changing the stored data.

Detailed Application Field Plans

The MT29F256G08AUCDBJ6-6IT:D TR finds applications in various electronic devices requiring high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets: The product can be used to store operating systems, applications