MT29F256G08AMEBBK7-12:B TR

Product Overview

Category

The MT29F256G08AMEBBK7-12:B TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AMEBBK7-12:B TR offers a storage capacity of 256 gigabits (32 gigabytes).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable data storage and retrieval.
• Low power consumption: The MT29F256G08AMEBBK7-12:B TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F256G08AMEBBK7-12:B TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Part Number: MT29F256G08AMEBBK7-12:B TR
• Memory Type: NAND Flash
• Storage Capacity: 256 gigabits (32 gigabytes)
• Organization: 8 bits x 4,096 pages x 2,048 blocks
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Toggle Mode 2.0
• Package Type: SMT
• Package Dimensions: [Provide dimensions if available]

Detailed Pin Configuration

The MT29F256G08AMEBBK7-12:B TR features a specific pin configuration for proper integration into electronic devices. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE# /#RE: Chip enable input
4. CLE: Command latch enable input
5. ALE: Address latch enable input
6. WP#/ACC: Write protect input
7. R/B#: Ready/Busy output
8. DQ0-DQ7: Data input/output lines
9. RE#/WE#: Read/Write control input
10. CEB#/VPP: Chip enable input/VPP (programming voltage) input
11. RB#/BY#/WP#: Ready/Busy output/Byte/Word programming input
12. NC: No connection

Note: The pin configuration may vary depending on the manufacturer's specifications.

Functional Features

The MT29F256G08AMEBBK7-12:B TR offers several functional features that enhance its performance and usability:

• Page Read/Program/Erase Operations: This NAND flash memory chip supports efficient page-level read, program, and erase operations, allowing for quick data access and modification.
• Block Management: It incorporates advanced block management algorithms to optimize wear leveling and ensure uniform usage of memory blocks, thereby extending the product's lifespan.
• Error Correction Code (ECC): The MT29F256G08AMEBBK7-12:B TR employs ECC techniques to detect and correct errors during data transmission, enhancing data integrity and reliability.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, ensuring that only reliable blocks are used for data storage.
• Power Loss Protection: This product incorporates power loss protection mechanisms to prevent data loss in case of sudden power failures or interruptions.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick read and write operations.
• Reliable performance ensures data integrity and longevity.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• The high density of NAND flash memory chips may result in higher costs compared to lower-capacity alternatives.
• Limited endurance: Frequent program/erase cycles can degrade the lifespan of NAND flash memory.

Working Principles

The MT29F256G08AMEBBK7-12:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary states of 0s and 1s.

During read operations, the controller applies appropriate voltages to the memory cells, allowing the charges to be sensed and interpreted as data. Write operations involve applying specific voltage levels to modify the charge trapped in the floating gate, thereby