MT29F256G08AMCBBK7-6:B TR

Product Overview

Category

The MT29F256G08AMCBBK7-6:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AMCBBK7-6:B TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Compact package: The MT29F256G08AMCBBK7-6:B TR comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT29F256G08AMCBBK7-6:B TR is typically packaged in trays or reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for industrial production.

Specifications

• Memory Type: NAND Flash
• Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)
• Pin Count: 169 pins

Detailed Pin Configuration

The MT29F256G08AMCBBK7-6:B TR has a total of 169 pins. The pin configuration is as follows:

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Functional Features

• High-speed data transfer: The MT29F256G08AMCBBK7-6:B TR offers fast read and write speeds, allowing for efficient data processing.
• Error correction: This NAND flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: The MT29F256G08AMCBBK7-6:B TR includes mechanisms to identify and manage bad blocks, enhancing overall performance and durability.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Compact package size
• RoHS compliant

Disadvantages

• Higher cost compared to lower-capacity NAND flash memory options
• Limited compatibility with older devices that do not support UFS interface

Working Principles

The MT29F256G08AMCBBK7-6:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells are made up of floating-gate transistors that can retain electrical charges, representing binary data (0s and 1s). When data is written or read, voltages are applied to specific memory cells to alter or detect the charge levels, respectively.

Detailed Application Field Plans

The MT29F256G08AMCBBK7-6:B TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F256G08CMCBBK7-6:B TR: Similar to the MT29F256G08AMCBBK7-6:B TR, this model offers a 256 GB capacity and UFS interface.
2. MT29F256G08CECBBK7-6:B TR: This alternative model also provides a 256 GB capacity but features an eMMC (embedded MultiMediaCard) interface.
3. MT29F256G08AUCBBK7-6:B TR: With a 256 GB capacity and UFS interface, this model is suitable for high-performance applications.

These alternative models offer similar capacities and interfaces, providing flexibility in choosing the most suitable NAND flash memory solution for specific requirements.

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