MT29F256G08AMCBBH7-6IT:B TR

Product Overview

Category

The MT29F256G08AMCBBH7-6IT:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AMCBBH7-6IT:B TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08AMCBBH7-6IT:B TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F256G08AMCBBH7-6IT:B TR is typically packaged in a surface-mount technology (SMT) package. The exact packaging quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F256G08AMCBBH7-6IT:B TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP: Write protect
12. RP: Reset/power-down

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, enhancing efficiency.
• Random Access: Provides random access to any memory location, facilitating quick data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F256G08AMCBBH7-6IT:B TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for data transfer between the memory cells and external devices.

Detailed Application Field Plans

The MT29F256G08AMCBBH7-6IT:B TR finds applications in various electronic devices that require high-capacity data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F256G08CMCBBH7-6IT: Similar to the MT29F256G08AMCBBH7-6IT:B TR, this model offers the same storage capacity and features but comes in a different package type.
2. MT29F256G08AUCBBH7-6IT: This alternative model provides the same storage capacity and characteristics but operates at a lower voltage range.
3. MT29F256G08AWCBBH7-6IT: Another alternative with similar specifications, but designed for industrial