MT29F256G08AMCBBH7-6:B TR

Product Overview

Category

The MT29F256G08AMCBBH7-6:B TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AMCBBH7-6:B TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory chip enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08AMCBBH7-6:B TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This chip is available in a compact package, making it suitable for integration into small form factor devices.

Packaging/Quantity

The MT29F256G08AMCBBH7-6:B TR is typically packaged in a surface-mount technology (SMT) package. It is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT29F256G08AMCBBH7-6:B TR features a specific pin configuration for proper integration into electronic devices. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address lines
7. DQ0-DQ15: Data input/output lines
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: Allows data to be written in page-sized increments, enhancing write performance.
• Block Erase: Enables erasing of entire blocks of data, facilitating efficient memory management.
• Read Operation: Provides fast and reliable data retrieval from the memory array.
• Wear-Leveling: Implements wear-leveling algorithms to distribute write operations evenly across the memory cells, extending the product's lifespan.
• Error Correction Code (ECC): Incorporates ECC techniques to detect and correct errors that may occur during data transmission or storage.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small form factor devices.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory chips.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08AMCBBH7-6:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate.

During a write operation, data is programmed into the memory cells by applying appropriate voltages to the control gates and the bit lines. Reading data involves sensing the electrical charge on the floating gate, which determines the stored information.

The chip's controller manages various operations such as program, erase, and read, ensuring proper data management and error correction.

Detailed Application Field Plans

The MT29F256G08AMCBBH7-6:B TR finds application in a wide range of electronic devices that require high-capacity data storage. Some specific application fields include:

1. Smartphones and Tablets: Enables large-scale data storage for apps, multimedia content, and user data.
2. Digital Cameras: Provides ample space for storing high-resolution photos and videos.
3. Solid-State Drives (SSDs): Used as primary storage in SSDs, offering fast and reliable data access.
4. Industrial Control Systems: Supports data storage requirements in industrial automation and control systems.
5. Automotive Electronics: Used for data storage in infotainment systems, navigation units, and advanced driver-assistance systems (ADAS).

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0