MT29F256G08AKEBBK7-12:B TR

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (256GB)
  • NAND Flash technology
• Package: BGA (Ball Grid Array)
• Essence: Reliable and high-performance data storage solution
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Model: MT29F256G08AKEBBK7-12:B TR
• Capacity: 256GB
• Interface: Parallel
• Voltage: 3.3V
• Speed: 12ns
• Organization: 32Gb x 8
• Operating Temperature: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT29F256G08AKEBBK7-12:B TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. VSS
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization

Advantages

• Large storage capacity
• Fast data access and transfer speeds
• Low power consumption
• Compact BGA package for space-saving designs
• RoHS compliant, environmentally friendly

Disadvantages

• Higher cost compared to traditional storage solutions
• Limited endurance due to the nature of NAND Flash technology
• Requires specific hardware and software support for optimal performance

Working Principles

The MT29F256G08AKEBBK7-12:B TR utilizes NAND Flash memory technology to store and retrieve data. It operates by storing electrical charges in memory cells within the NAND array. These charges represent binary data (0s and 1s). The memory cells are organized into pages and blocks, allowing for efficient read and write operations. The device uses various algorithms and mechanisms to ensure data integrity, such as error correction codes and wear-leveling techniques.

Detailed Application Field Plans

The MT29F256G08AKEBBK7-12:B TR is widely used in various applications that require high-capacity and reliable data storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• MT29F256G08AUCABH7-12:B TR
• MT29F256G08AUEDBH7-12:B TR
• MT29F256G08AUCABH6-12:B TR
• MT29F256G08AUEDBH6-12:B TR
• MT29F256G08AUCABH7-12:K TR

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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