MT29F256G08AKCBBK7-6:B TR

Product Overview

Category

The MT29F256G08AKCBBK7-6:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AKCBBK7-6:B TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F256G08AKCBBK7-6:B TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is packaged in a small form factor, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F256G08AKCBBK7-6:B TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory type: NAND flash
• Capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Voltage supply: 2.7V - 3.6V
• Operating temperature: -40°C to +85°C
• Package dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F256G08AKCBBK7-6:B TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page-based architecture: The MT29F256G08AKCBBK7-6:B TR operates on a page-based architecture, allowing for efficient read and write operations at the page level.
• Error correction code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-leveling algorithm: To extend the lifespan of the memory cells, the product utilizes a wear-leveling algorithm that evenly distributes write operations across the entire memory array.
• Bad block management: The MT29F256G08AKCBBK7-6:B TR includes a bad block management system to identify and manage defective blocks, maintaining overall memory reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance for demanding applications.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08AKCBBK7-6:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate.

During write operations, data is programmed into the memory cells by applying high voltage pulses to the appropriate word and bit lines. Reading data involves sensing the electrical charge on the memory cells and converting it back into digital information.

Detailed Application Field Plans

The MT29F256G08AKCBBK7-6:B TR finds applications in various electronic devices that require high-capacity data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F256G08AUCBBH3-12IT: Similar to the MT29F256G08AKCBBK7-6:B TR, this alternative model offers a 256 GB capacity and operates at a higher operating temperature range (-40°C to +105°C).
2. MT29F256G08AUEDBH4-75IT: This alternative model provides a 256 GB capacity with enhanced endurance, allowing for a greater number of program/