Micron Technology Inc.
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MT29F1T208EGHBBG1-3RES:B TR

MT29F1T208EGHBBG1-3RES:B TR

Product Overview

Category

MT29F1T208EGHBBG1-3RES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High-speed data transfer
  • Non-volatile memory
  • Large storage capacity
  • Compact size
  • Low power consumption

Package

MT29F1T208EGHBBG1-3RES:B TR comes in a small form factor package, typically a surface mount technology (SMT) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT29F1T208EGHBBG1-3RES:B TR is usually packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may differ based on the manufacturer's specifications.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 1 Terabit (128 Gigabytes)
  • Interface: Toggle Mode 2.0
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400 Megabytes/s (Read), Up to 200 Megabytes/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F1T208EGHBBG1-3RES:B TR may vary depending on the manufacturer. Please refer to the datasheet provided by the manufacturer for the specific pin configuration details.

Functional Features

  • Error Correction Code (ECC) for data integrity
  • Wear-leveling algorithm for extended lifespan
  • Bad block management for improved reliability
  • Block erase and program operations for data modification
  • Read and write access control for data security

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Compact size
  • Low power consumption
  • Reliable data integrity
  • Extended lifespan with wear-leveling algorithm

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited endurance (number of erase/write cycles)

Working Principles

MT29F1T208EGHBBG1-3RES:B TR utilizes NAND flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value.

Detailed Application Field Plans

MT29F1T208EGHBBG1-3RES:B TR finds applications in various electronic devices that require high-capacity and non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  • MT29F1G08ABADAWP-IT: 1 Gigabit (128 Megabytes) NAND Flash Memory
  • MT29F2G08ABAEAWP-IT: 2 Gigabit (256 Megabytes) NAND Flash Memory
  • MT29F4G08ABADAWP-IT: 4 Gigabit (512 Megabytes) NAND Flash Memory
  • MT29F8G08ABACAWP-IT: 8 Gigabit (1 Gigabyte) NAND Flash Memory
  • MT29F16G08ABAAAWP-IT: 16 Gigabit (2 Gigabytes) NAND Flash Memory

These alternative models offer different storage capacities to suit various application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F1T208EGHBBG1-3RES:B TR v technických řešeních

  1. What is the MT29F1T208EGHBBG1-3RES:B TR?

    • The MT29F1T208EGHBBG1-3RES:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. What is the storage capacity of the MT29F1T208EGHBBG1-3RES:B TR?

    • The MT29F1T208EGHBBG1-3RES:B TR has a storage capacity of 8 gigabytes (GB).

  3. What is the operating voltage range for the MT29F1T208EGHBBG1-3RES:B TR?

    • The operating voltage range for this chip is typically between 2.7 volts (V) and 3.6V.

  4. What is the maximum data transfer rate of the MT29F1T208EGHBBG1-3RES:B TR?

    • The maximum data transfer rate for this NAND flash memory chip is typically around 200 megabytes per second (MB/s).

  5. What is the interface used to connect the MT29F1T208EGHBBG1-3RES:B TR to other devices?

    • This chip uses a standard ONFI (Open NAND Flash Interface) 2.3 interface for communication with other devices.

  6. What are some common applications of the MT29F1T208EGHBBG1-3RES:B TR?

    • This NAND flash memory chip is commonly used in various technical solutions, including embedded systems, solid-state drives (SSDs), industrial automation, and automotive electronics.

  7. Does the MT29F1T208EGHBBG1-3RES:B TR support wear-leveling algorithms?

    • Yes, this chip supports wear-leveling algorithms, which help distribute write operations evenly across the memory cells to extend the lifespan of the NAND flash memory.

  8. What is the temperature range for the MT29F1T208EGHBBG1-3RES:B TR?

    • The operating temperature range for this chip is typically between -40 degrees Celsius (°C) and 85°C.

  9. Is the MT29F1T208EGHBBG1-3RES:B TR compatible with other NAND flash memory chips?

    • Yes, this chip is designed to be compatible with other NAND flash memory chips that adhere to the ONFI 2.3 interface standard.

  10. Can the MT29F1T208EGHBBG1-3RES:B TR be used in both commercial and industrial applications?

    • Yes, this NAND flash memory chip is suitable for use in both commercial and industrial applications due to its robust design and wide operating temperature range.