MT29F1T208EGHBBG1-3R:B TR

Product Overview

Category

MT29F1T208EGHBBG1-3R:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Shock and vibration resistance

Package

MT29F1T208EGHBBG1-3R:B TR is available in a small form factor package, commonly known as Ball Grid Array (BGA). This package ensures efficient heat dissipation and allows for easy integration into electronic devices.

Essence

The essence of MT29F1T208EGHBBG1-3R:B TR lies in its ability to provide high-speed and reliable data storage in a compact and energy-efficient package.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the customer's requirements. The quantity per reel or tray can vary, but it is usually in the range of several hundred to a few thousand units.

Specifications

• Storage Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Page Size: 8 Kilobytes
• Block Size: 512 Kilobytes
• Read Speed: Up to 200 Megabytes/s
• Write Speed: Up to 100 Megabytes/s
• Endurance: 3,000 Program/Erase Cycles

Detailed Pin Configuration

The pin configuration of MT29F1T208EGHBBG1-3R:B TR is as follows:

1. VCC - Power Supply
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. CLE - Command Latch Enable
7. ALE - Address Latch Enable
8. R/B# - Ready/Busy
9. DQ0-DQ15 - Data Input/Output

Functional Features

• Error Correction Code (ECC) for data integrity
• Bad Block Management for efficient use of memory
• Wear-Leveling Algorithm for even distribution of write cycles
• Read Disturb Management to prevent data corruption during read operations
• Power Loss Protection to ensure data integrity in case of sudden power loss

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast read and write speeds enable quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Compact package size facilitates integration into small form factor devices
• Reliable data retention ensures long-term storage of critical information
• Shock and vibration resistance makes it suitable for rugged environments

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F1T208EGHBBG1-3R:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate.

During a write operation, the charge on the floating gate is adjusted to represent the desired data. Reading the stored data involves measuring the electrical charge on the floating gate and interpreting it as binary information.

The memory cells are organized into pages and blocks, allowing for efficient read and write operations. The controller manages the data transfer between the host device and the NAND flash memory, ensuring data integrity and optimizing performance.

Detailed Application Field Plans

MT29F1T208EGHBBG1-3R:B TR finds applications in various fields, including:

1. Smartphones and tablets - for storing operating systems, applications, and user data.
2. Digital cameras - for capturing and storing high-resolution photos and videos.
3. Solid-state drives (SSDs) - for replacing traditional hard disk drives in computers and servers, providing faster boot times and improved overall system performance.
4. Automotive electronics - for data storage in infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
5. Industrial equipment - for storing firmware, configuration data, and logging information in embedded systems.

Detailed and Complete Alternative Models

1. MT29F1T128GHBBG1QD
2. MT29F1T256GHBBG1QD
3. MT29F1T512GHBBG1QD