MT29F1T208EGCBBG1-37ES:B TR

Product Overview

Category

MT29F1T208EGCBBG1-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F1T208EGCBBG1-37ES:B TR comes in a small form factor package, suitable for surface mount technology (SMT) assembly.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT29F1T208EGCBBG1-37ES:B TR is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

• Memory Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Megabytes/s (Read), Up to 200 Megabytes/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F1T208EGCBBG1-37ES:B TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. CLE - Command latch enable
7. ALE - Address latch enable
8. R/B# - Ready/busy status
9. DQ0-DQ15 - Data input/output lines
10. WP# - Write protect
11. RST# - Reset

Functional Features

• Page Read/Program/Erase operations
• Block management and wear leveling
• Error correction code (ECC) for data integrity
• Bad block management
• Power loss protection

Advantages and Disadvantages

Advantages

• High-speed data transfer allows for quick access to stored information.
• Large storage capacity meets the demands of modern electronic devices.
• Low power consumption helps prolong battery life.
• Compact size enables integration into various form factors.
• Reliable data storage ensures data integrity.

Disadvantages

• Limited endurance due to the finite number of program/erase cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F1T208EGCBBG1-37ES:B TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The memory cells are arranged in blocks, and data is read, programmed, or erased at the block level.

Detailed Application Field Plans

MT29F1T208EGCBBG1-37ES:B TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1T208EGCBBG1-37ES:B TR include: - Samsung K9K8G08U0M - Toshiba TH58NVG6D2FLA89 - Micron MT29F1G08ABADAWP

These models offer similar functionality and can be used as alternatives depending on specific requirements.

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