MT29F1T208ECHBBJ4-3RES:B TR

Product Overview

Category

MT29F1T208ECHBBJ4-3RES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1T208ECHBBJ4-3RES:B TR offers a large storage capacity, ranging from several gigabytes to terabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access and retrieval of stored information.
• Non-volatile memory: The NAND flash memory retains data even when power is disconnected, making it suitable for long-term storage.
• Compact package: The product comes in a small form factor, enabling its integration into space-constrained electronic devices.
• Reliable performance: It offers reliable performance with low error rates and high endurance.

Package and Quantity

The MT29F1T208ECHBBJ4-3RES:B TR is typically packaged in a surface-mount package (SMT) or ball grid array (BGA) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: Varies (e.g., 16GB, 32GB, 64GB)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400MB/s (read), up to 200MB/s (write)

Pin Configuration

The detailed pin configuration of the MT29F1T208ECHBBJ4-3RES:B TR can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of multiple pages simultaneously.
• Read Operation: Facilitates the retrieval of stored data.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory cells, enhancing longevity.
• Error Correction Code (ECC): Detects and corrects errors during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for extensive data storage needs.
• Fast data transfer rate for quick access to stored information.
• Non-volatile memory ensures data retention even without power.
• Compact package allows integration into various electronic devices.
• Reliable performance with low error rates and high endurance.

Disadvantages

• Limited lifespan due to a finite number of program/erase cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT29F1T208ECHBBJ4-3RES:B TR utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors within memory cells. When a voltage is applied, the trapped electrons can be read or programmed, allowing for data storage and retrieval.

Detailed Application Field Plans

The MT29F1T208ECHBBJ4-3RES:B TR finds applications in various fields, including: - Consumer electronics: Smartphones, tablets, digital cameras, portable media players. - Computing: Solid-state drives (SSDs), embedded systems, industrial computers. - Automotive: Infotainment systems, navigation systems, advanced driver-assistance systems (ADAS). - Networking: Routers, switches, network attached storage (NAS) devices.

Detailed Alternative Models

Several alternative models to the MT29F1T208ECHBBJ4-3RES:B TR are available in the market, offering similar functionality and performance. Some notable alternatives include: - Samsung K9GAG08U0E - Toshiba TH58NVG6D2ETA20 - Micron MT29F1G08ABADAWP

Please note that the availability and specifications of alternative models may vary depending on the manufacturer and region.

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