MT29F1T208ECHBBJ4-3R:B TR

Product Overview

Category

The MT29F1T208ECHBBJ4-3R:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Wide operating temperature range

Package

The MT29F1T208ECHBBJ4-3R:B TR is available in a small form factor package, making it suitable for space-constrained applications. It is commonly packaged in a surface-mount technology (SMT) package.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and reliably, while consuming minimal power.

Packaging/Quantity

The MT29F1T208ECHBBJ4-3R:B TR is typically sold in reels or trays, with quantities varying depending on customer requirements. Common packaging options include 1000 pieces per reel or tray.

Specifications

• Storage Capacity: Varies (e.g., 8GB, 16GB, 32GB)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps (megabits per second)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F1T208ECHBBJ4-3R:B TR has a standard pin configuration, which includes the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. R/B#: Ready/Busy status output
5. A0-A19: Address inputs
6. DQ0-DQ7: Data input/output
7. WE#: Write enable
8. RE#: Read enable
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, improving efficiency.
• Page Program: Enables fast and efficient programming of individual memory pages.
• Random Access: Provides quick access to specific data within the memory array.
• Error Correction Code (ECC): Implements error correction techniques to enhance data reliability.
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast read and write speeds facilitate quick data access and transfer.
• Low power consumption prolongs battery life in portable devices.
• Compact package size enables integration into small form factor devices.
• Reliable data retention ensures long-term data integrity.
• Wide operating temperature range makes it suitable for various environments.

Disadvantages

• Limited erase/write cycles compared to other types of non-volatile memory.
• Susceptible to physical damage from electrostatic discharge (ESD).
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F1T208ECHBBJ4-3R:B TR utilizes NAND flash memory technology. It consists of a grid of memory cells that store data as electrical charges. These cells are organized into blocks, which can be individually erased or programmed. When data is written, an electric charge is applied to the appropriate memory cells, altering their state. Reading data involves detecting the presence or absence of charges in the cells.

Detailed Application Field Plans

The MT29F1T208ECHBBJ4-3R:B TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-IT: 1Gb NAND flash memory with similar specifications.
• MT29F2G08ABAEAWP-IT: 2Gb NAND flash memory with higher storage capacity.
• MT29F4G08ABAEAWP-IT: 4Gb NAND flash memory with even higher storage capacity.
• MT29F8G08ABACAWP-IT: 8Gb NAND flash memory for applications requiring larger storage.

These alternative models offer varying storage capacities to cater to different requirements.

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