MT29F1T208ECCBBJ4-37ES:B TR

Product Overview

Category

MT29F1T208ECCBBJ4-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F1T208ECCBBJ4-37ES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT29F1T208ECCBBJ4-37ES:B TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Megabytes/s (Read), Up to 200 Megabytes/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F1T208ECCBBJ4-37ES:B TR is as follows:

1. Vcc (Power Supply)
2. CE# (Chip Enable)
3. RE# (Read Enable)
4. WE# (Write Enable)
5. CLE (Command Latch Enable)
6. ALE (Address Latch Enable)
7. WP# (Write Protect)
8. R/B# (Ready/Busy)
9. DQ0-DQ15 (Data Input/Output)
10. NC (No Connection)

Functional Features

• Page Read and Program Operations
• Block Erase Operation
• Random Access to Memory Cells
• Error Correction Code (ECC) Support
• Wear-Leveling Algorithm for Enhanced Lifespan
• Bad Block Management

Advantages and Disadvantages

Advantages

• High-speed data transfer enables quick access to stored information.
• Large storage capacity allows for the storage of a vast amount of data.
• Compact size facilitates integration into various electronic devices.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit compared to some alternative memory technologies.

Working Principles

MT29F1T208ECCBBJ4-37ES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltage levels to the control pins and reading or writing the data through the I/O pins.

Detailed Application Field Plans

MT29F1T208ECCBBJ4-37ES:B TR finds applications in various fields, including: - Mobile devices (smartphones, tablets) - Digital cameras - Solid-state drives (SSDs) - Industrial automation systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to MT29F1T208ECCBBJ4-37ES:B TR include: - Samsung K9GAG08U0E - Toshiba TH58NVG6D2ETA20 - Micron MT29F1G08ABADAWP

These models offer similar functionality and can be used as alternatives depending on specific requirements and compatibility with the target system.

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