MT29F1T08CUCCBH8-6ITR:C TR

Product Overview

Category

MT29F1T08CUCCBH8-6ITR:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Durable and reliable

Package

MT29F1T08CUCCBH8-6ITR:C TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store large amounts of data reliably and efficiently, enabling seamless operation of electronic devices.

Packaging/Quantity

MT29F1T08CUCCBH8-6ITR:C TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 Megabytes per second (MB/s)
• Endurance: Up to 10,000 Program/Erase cycles

Detailed Pin Configuration

The pin configuration of MT29F1T08CUCCBH8-6ITR:C TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE#: Chip enable
4. RE#: Read enable
5. WE#: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B#: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments, enhancing write efficiency.
• Block Erase Operation: Enables erasing of large blocks of data, improving memory management.
• Read and Write Protection: Provides security features to protect sensitive data from unauthorized access.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enhance overall device performance.
• Low power consumption prolongs battery life in portable devices.
• Compact size enables integration into small form factor devices.
• Durable and reliable, ensuring data integrity over extended usage.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss if not properly backed up or protected.

Working Principles

MT29F1T08CUCCBH8-6ITR:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves detecting the voltage levels in the memory cells to retrieve the stored information.

Detailed Application Field Plans

MT29F1T08CUCCBH8-6ITR:C TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1T08CUCCBH8-6ITR:C TR include: - Samsung K9GAG08U0E - Toshiba TH58NVG5D2ETA20 - Micron MT29F1G08ABADAWP

These models offer similar functionality and specifications, providing options for different design requirements.

In conclusion, MT29F1T08CUCCBH8-6ITR:C TR is a NAND flash memory product that offers high storage capacity, fast read/write speeds, and low power consumption. It finds application in various electronic devices and provides reliable data storage. While it has advantages such as durability and compact size, it also has limitations like limited endurance and higher cost compared to other memory types. Understanding its working principles and considering alternative models can help in making informed decisions for specific design needs.