MT29F1T08CUCBBH8-6R:B

Product Overview

Category

MT29F1T08CUCBBH8-6R:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1T08CUCBBH8-6R:B is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F1T08CUCBBH8-6R:B lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each package containing a specific quantity of NAND flash memory chips.

Specifications

• Model: MT29F1T08CUCBBH8-6R:B
• Storage Capacity: 1 Terabit (128 Gigabytes)
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 600 Megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT29F1T08CUCBBH8-6R:B is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. CLE - Command Latch Enable
7. ALE - Address Latch Enable
8. R/B# - Ready/Busy
9. DQ0-DQ15 - Data Input/Output

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of large blocks of data.
• Random Access: Provides quick access to specific data locations.
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors.
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast read and write speeds enable quick data transfer.
• Non-volatile memory retains data even when power is disconnected.
• Compact size facilitates integration into various electronic devices.
• Low power consumption helps conserve battery life.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit of storage compared to traditional hard drives.

Working Principles

MT29F1T08CUCBBH8-6R:B utilizes a technology called NAND flash memory, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using electrical charges. When data is written, the charges are adjusted to represent the desired information. During reading, the charges are measured to retrieve the stored data.

Detailed Application Field Plans

MT29F1T08CUCBBH8-6R:B finds applications in various fields, including:

1. Mobile Devices: Used for storing operating systems, applications, and user data in smartphones and tablets.
2. Digital Cameras: Enables high-capacity storage for photos and videos.
3. Solid-State Drives (SSDs): Provides fast and reliable storage for computers and servers.
4. Automotive Electronics: Used in infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
5. Industrial Automation: Enables data storage in control systems, robotics, and monitoring devices.

Detailed and Complete Alternative Models

1. Samsung K9F1G08U0D
2. Toshiba TH58NVG6D2ETA20
3. Micron MT29F1G08ABAEAWP

These alternative models offer similar specifications and functionality to MT29F1T08CUCBBH8-6R:B and can be considered as alternatives based on specific requirements and availability.

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