MT29F1T08CMCBBJ4-37:B

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Model: MT29F1T08CMCBBJ4-37:B
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 37 ns
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F1T08CMCBBJ4-37:B has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 20 | CE# | Chip enable input | | 21 | WE# | Write enable input | | 22 | RE# | Read enable input | | 23 | CLE | Command latch enable input | | 24 | ALE | Address latch enable input | | 25 | WP# | Write protect input | | 26 | R/B# | Ready/busy output | | 27-46 | DQ0-DQ19 | Data input/output | | 47 | DQS | Data strobe input/output | | 48 | VSS | Ground |

Functional Features

• High-speed data transfer
• Reliable data retention
• Block erase and program operations
• Error correction code (ECC) support
• Wear-leveling algorithm for extended lifespan

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact package size
• High reliability and durability

Disadvantages

• Relatively high cost compared to other memory technologies
• Limited write endurance

Working Principles

The MT29F1T08CMCBBJ4-37:B is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using multi-level cell (MLC) technology. The memory cells are accessed through an address bus, and data is transferred via a parallel interface. The chip utilizes various algorithms and error correction techniques to ensure data integrity and longevity.

Detailed Application Field Plans

The MT29F1T08CMCBBJ4-37:B is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-IT: 1 Gigabit NAND Flash Memory
• MT29F2G08ABAEAWP-IT: 2 Gigabit NAND Flash Memory
• MT29F4G08ABADAWP-IT: 4 Gigabit NAND Flash Memory
• MT29F8G08ABACAWP-IT: 8 Gigabit NAND Flash Memory
• MT29F16G08CBACAWP-IT: 16 Gigabit NAND Flash Memory

These alternative models offer different capacities while maintaining similar functionality and characteristics.

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