MT29F1G08ABAFAWP-ITE:F TR

Product Overview

Category

The MT29F1G08ABAFAWP-ITE:F TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABAFAWP-ITE:F TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F1G08ABAFAWP-ITE:F TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually supplied in reels or trays, with quantities ranging from a few hundred to several thousand units per package.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F1G08ABAFAWP-ITE:F TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines
9. NC: No connection (reserved pin)

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency.
• Random Access: Provides direct access to any memory location, allowing for efficient data retrieval.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data read/write operations.
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small form factor devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of non-volatile memory.
• Susceptible to data corruption if not properly managed or protected.

Working Principles

The MT29F1G08ABAFAWP-ITE:F TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltage levels to the control pins and reading or writing the stored charge.

Detailed Application Field Plans

The MT29F1G08ABAFAWP-ITE:F TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F1G08ABADAWP-ITE:F TR
2. MT29F1G08ABAEAWP-ITE:F TR
3. MT29F1G08ABBEAWP-ITE:F TR
4. MT29F1G08ABBDAWP-ITE:F TR
5. MT29F1G08ABCDAPC-ITE:F TR

These alternative models offer similar specifications and functionality to the MT29F1G08ABAFAWP-ITE:F TR, providing flexibility in choosing the most suitable NAND flash memory for specific applications.

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