MT29F1G08ABAFAWP-ITE:F

Product Overview

Category

The MT29F1G08ABAFAWP-ITE:F belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABAFAWP-ITE:F offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into different electronic devices.

Packaging/Quantity

The MT29F1G08ABAFAWP-ITE:F is typically packaged in surface-mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 gigabit
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F1G08ABAFAWP-ITE:F is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F1G08ABAFAWP-ITE:F supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management techniques to optimize performance and extend the lifespan of the memory.
• Error Correction: This NAND flash memory utilizes error correction codes (ECC) to ensure data integrity and reliability.
• Wear Leveling: The product employs wear leveling algorithms to distribute write operations evenly across the memory cells, preventing premature cell failure.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G08ABAFAWP-ITE:F is based on NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges in the floating gate of the memory cell. To read or write data, specific voltage levels are applied to the control gates and bit lines.

During a read operation, the charge level in the memory cell is detected, allowing the retrieval of stored data. For programming, a higher voltage is applied to the control gate, causing electrons to tunnel into the floating gate, altering its charge level. Erasing is achieved by applying a high voltage to the entire block, removing the trapped charges from the floating gates.

Detailed Application Field Plans

The MT29F1G08ABAFAWP-ITE:F finds applications in various electronic devices that require non-volatile storage. Some of the common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Enables storage of high-resolution photos and videos.
3. Solid-state drives (SSDs): Provides fast and reliable storage for computer systems.
4. Automotive electronics: Used for data storage in infotainment systems, navigation