MT29F1G08ABADAWP:D TR

Product Overview

Category

MT29F1G08ABADAWP:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1G08ABADAWP:D TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F1G08ABADAWP:D TR lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F1G08ABADAWP:D TR units.

Specifications

• Storage Capacity: 1 Gigabit (1 Gb)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT29F1G08ABADAWP:D TR is as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments
• Block Erase Operation: Enables erasing of large blocks of data
• Random Access: Provides the ability to access data at any location within the memory array
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors during read operations
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Compact size
• Low power consumption
• Reliable data retention
• Cost-effective compared to other storage technologies

Disadvantages

• Limited endurance compared to other types of non-volatile memory
• Slower write speeds compared to volatile memory technologies

Working Principles

MT29F1G08ABADAWP:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves sensing the electrical state of the memory cells.

Detailed Application Field Plans

MT29F1G08ABADAWP:D TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1G08ABADAWP:D TR include: - MT29F1G08ABAEAWP:D TR - MT29F1G08ABBEAWP:D TR - MT29F1G08ABCEAWP:D TR - MT29F1G08ABDEAWP:D TR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the appropriate NAND flash memory for specific applications.

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