MT29F16G08CBACAWP:C TR

Product Overview

• Category: Memory
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity (16GB)
  • Reliable and durable
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash memory
• Packaging/Quantity: Individual units in anti-static packaging

Specifications

• Capacity: 16GB
• Interface: Parallel
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F16G08CBACAWP:C TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. BYTE#
36. NC
37. NC
38. NC
39. NC
40. GND
41. DQ0
42. DQ1
43. DQ2
44. DQ3
45. DQ4
46. DQ5
47. DQ6
48. DQ7

Functional Features

• High-speed data transfer
• Error correction and detection mechanisms
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan
• Power-saving features

Advantages

• Large storage capacity
• Fast data access and transfer rates
• Reliable and durable
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance compared to other memory types
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F16G08CBACAWP:C TR is based on NAND Flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are arranged in a grid-like structure, with rows and columns accessed through the pin configuration.

Data can be written to and read from the memory cells using specific commands and control signals. The device utilizes error correction codes (ECC) to ensure data integrity and reliability. Wear-leveling algorithms distribute write operations evenly across the memory cells, preventing premature wear-out of specific areas.

Detailed Application Field Plans

The MT29F16G08CBACAWP:C TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics (e.g., smartphones, tablets)

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT29F16G08ABACAWP:C TR
2. MT29F16G08CBACAWP:D TR
3. MT29F16G08ABACAWP:D TR

These models have comparable specifications and pin configurations, making them suitable alternatives for the MT29F16G08CBACAWP:C TR.

In conclusion, the MT29F16G08CBACAWP:C TR is a high-capacity NAND Flash memory device used for data storage in various electronic applications. Its reliable performance, fast data transfer rates, and compact form factor make it a popular choice in the industry. However, it is important to consider its limited endurance and higher cost per gigabyte compared to traditional hard drives.