Micron Technology Inc.
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MT29F16G08ABABAWP-IT:B TR

MT29F16G08ABABAWP-IT:B TR

Product Overview

Category

MT29F16G08ABABAWP-IT:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F16G08ABABAWP-IT:B TR offers a storage capacity of 16 gigabytes (GB), allowing users to store a large amount of data.
  • Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
  • Low power consumption: The MT29F16G08ABABAWP-IT:B TR is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a small form factor, making it suitable for space-constrained electronic devices.
  • RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F16G08ABABAWP-IT:B TR is packaged in a surface-mount technology (SMT) package. It is available in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

  • Storage Capacity: 16 GB
  • Interface: NAND
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400 megabits per second (Mbps)
  • Package Type: TSOP (Thin Small Outline Package)

Pin Configuration

The detailed pin configuration of MT29F16G08ABABAWP-IT:B TR is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. NC
  9. DQ0
  10. DQ1
  11. DQ2
  12. DQ3
  13. DQ4
  14. DQ5
  15. DQ6
  16. DQ7
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC
  49. NC
  50. NC
  51. NC
  52. NC
  53. NC
  54. NC
  55. NC
  56. NC
  57. NC
  58. NC
  59. NC
  60. NC
  61. NC
  62. NC
  63. NC
  64. GND

Functional Features

  • Page Read/Program/Erase: The MT29F16G08ABABAWP-IT:B TR supports page read, program, and erase operations, allowing users to efficiently manage data.
  • Block Management: It incorporates advanced block management techniques, ensuring optimal utilization of memory blocks and enhancing overall performance.
  • Error Correction Code (ECC): This NAND flash memory utilizes ECC algorithms to detect and correct errors, ensuring data integrity.
  • Wear Leveling: The product employs wear leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

  • High storage capacity enables users to store large amounts of data.
  • Fast data transfer rate allows for quick access to stored information.
  • Reliable performance ensures data integrity and durability.
  • Low power consumption contributes to energy efficiency.
  • Compact package suits space-constrained electronic devices.
  • RoHS compliance promotes environmental friendliness.

Disadvantages

  • Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F16G08ABABAWP-IT:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. When reading or writing data, electrical charges are applied to the memory cells, altering their states to represent binary values.

Detailed Application Field Plans

The MT29F16G08ABABAWP-IT:B TR finds applications in various electronic devices, including: 1. Smartphones and

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F16G08ABABAWP-IT:B TR v technických řešeních

1. What is the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR has a storage capacity of 16 gigabytes (GB).

3. What is the interface used by the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR uses a standard NAND flash interface.

4. What are some common applications for the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR is commonly used in various technical solutions such as embedded systems, solid-state drives (SSDs), industrial automation, and automotive electronics.

5. What is the operating voltage range of the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR operates within a voltage range of 2.7V to 3.6V.

6. What is the data transfer rate of the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR supports a maximum data transfer rate of up to 200 megabytes per second (MB/s).

7. Does the MT29F16G08ABABAWP-IT:B TR support wear-leveling algorithms?

Yes, the MT29F16G08ABABAWP-IT:B TR supports wear-leveling algorithms, which help distribute data evenly across the memory cells to extend the lifespan of the flash memory.

8. Can the MT29F16G08ABABAWP-IT:B TR withstand harsh environmental conditions?

Yes, the MT29F16G08ABABAWP-IT:B TR is designed to operate reliably in a wide range of temperatures and can withstand shock and vibration.

9. Is the MT29F16G08ABABAWP-IT:B TR compatible with different operating systems?

Yes, the MT29F16G08ABABAWP-IT:B TR is compatible with various operating systems, including Windows, Linux, and embedded operating systems.

10. What is the expected lifespan of the MT29F16G08ABABAWP-IT:B TR?

The MT29F16G08ABABAWP-IT:B TR has a typical lifespan of several years, depending on usage patterns and operating conditions.