Micron Technology Inc.
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MT29F128G08EBEBBWP:B

MT29F128G08EBEBBWP:B

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: Reliable and efficient data storage solution
Packaging/Quantity: Individual units or reels of multiple units

Specifications

  • Capacity: 128 GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Organization: 8 Gb x 16
  • Page Size: 2 KB
  • Block Size: 128 KB
  • Read Speed: Up to 100 MB/s
  • Write Speed: Up to 50 MB/s
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F128G08EBEBBWP:B has a total of 48 pins arranged as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. CE#
  19. CLE#
  20. WE#
  21. RE#
  22. WP#
  23. R/B#
  24. DQ0
  25. DQ1
  26. DQ2
  27. DQ3
  28. DQ4
  29. DQ5
  30. DQ6
  31. DQ7
  32. DQ8
  33. DQ9
  34. DQ10
  35. DQ11
  36. DQ12
  37. DQ13
  38. DQ14
  39. DQ15
  40. VSS
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Reliable and durable storage
  • Low power consumption
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Bad block management

Advantages

  • Large storage capacity
  • Fast read/write speeds
  • Compact BGA package
  • Wide operating temperature range
  • Suitable for various electronic devices

Disadvantages

  • Higher cost compared to other memory technologies
  • Limited endurance (number of write cycles)
  • Requires specific controller support for optimal performance

Working Principles

The MT29F128G08EBEBBWP:B utilizes NAND flash memory technology to store data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level on the floating gate. When reading data, the charge levels are measured to determine the stored information. Writing involves applying voltage to the appropriate cells to modify the charge levels.

Detailed Application Field Plans

The MT29F128G08EBEBBWP:B is widely used in various electronic devices that require high-capacity data storage, such as:

  1. Solid-state drives (SSDs)
  2. Smartphones and tablets
  3. Digital cameras
  4. Portable media players
  5. Industrial control systems
  6. Automotive infotainment systems

Alternative Models

  1. MT29F128G08CBACAWP:B

    • Capacity: 128 GB
    • Interface: Parallel
    • Voltage: 3.3V
    • Organization: 8 Gb x 16
    • Page Size: 2 KB
    • Block Size: 128 KB

  2. MT29F128G08CECBBWP:B

    • Capacity: 128 GB
    • Interface: Parallel
    • Voltage: 3.3V
    • Organization: 8 Gb x 16
    • Page Size: 2 KB
    • Block Size: 128 KB

  3. MT29F128G08CFABBWP:B

    • Capacity: 128 GB
    • Interface: Parallel
    • Voltage: 3.3V
    • Organization: 8 Gb x 16
    • Page Size: 2 KB
    • Block Size: 128 KB

  4. MT29F128G08CGACAWP:B

    • Capacity: 128 GB
    • Interface: Parallel
    • Voltage: 3.3V
    • Organization: 8 Gb x 16
    • Page Size: 2 KB
    • Block Size: 128 KB

These alternative models offer similar

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F128G08EBEBBWP:B v technických řešeních

Sure! Here are 10 common questions and answers related to the application of MT29F128G08EBEBBWP:B in technical solutions:

  1. Q: What is MT29F128G08EBEBBWP:B? A: MT29F128G08EBEBBWP:B is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Q: What is the storage capacity of MT29F128G08EBEBBWP:B? A: MT29F128G08EBEBBWP:B has a storage capacity of 128 gigabits (16 gigabytes).

  3. Q: What is the interface used for connecting MT29F128G08EBEBBWP:B to a system? A: MT29F128G08EBEBBWP:B uses a standard NAND flash interface, such as ONFI (Open NAND Flash Interface) or Toggle Mode.

  4. Q: What are some typical applications of MT29F128G08EBEBBWP:B? A: MT29F128G08EBEBBWP:B is commonly used in various devices and systems that require non-volatile storage, such as smartphones, tablets, solid-state drives (SSDs), and embedded systems.

  5. Q: What is the operating voltage range of MT29F128G08EBEBBWP:B? A: MT29F128G08EBEBBWP:B operates at a voltage range of 2.7V to 3.6V.

  6. Q: Does MT29F128G08EBEBBWP:B support hardware encryption? A: No, MT29F128G08EBEBBWP:B does not have built-in hardware encryption capabilities. Encryption would need to be implemented at the system level.

  7. Q: What is the endurance rating of MT29F128G08EBEBBWP:B? A: MT29F128G08EBEBBWP:B has a typical endurance rating of 3,000 program/erase cycles.

  8. Q: Can MT29F128G08EBEBBWP:B operate in extreme temperatures? A: Yes, MT29F128G08EBEBBWP:B is designed to operate reliably in a wide temperature range, typically from -40°C to +85°C.

  9. Q: Does MT29F128G08EBEBBWP:B support error correction codes (ECC)? A: Yes, MT29F128G08EBEBBWP:B supports various ECC algorithms to ensure data integrity and reliability.

  10. Q: Is MT29F128G08EBEBBWP:B compatible with different operating systems? A: Yes, MT29F128G08EBEBBWP:B is compatible with popular operating systems like Windows, Linux, and Android, as long as the necessary drivers and software support are available.

Please note that the answers provided here are general and may vary depending on specific implementation details and requirements.