MT29F128G08EBCDBJ4-37ES:D TR

Product Overview

Category

MT29F128G08EBCDBJ4-37ES:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08EBCDBJ4-37ES:D TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08EBCDBJ4-37ES:D TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F128G08EBCDBJ4-37ES:D TR is available in a surface-mount package. It is typically sold in reels containing a specific quantity, usually 1000 units per reel.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Package Type: TSOP (Thin Small Outline Package)

Pin Configuration

The MT29F128G08EBCDBJ4-37ES:D TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F128G08EBCDBJ4-37ES:D TR allows for efficient reading, programming, and erasing of data at the page level.
• Block Management: It incorporates advanced block management techniques to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity enables the storage of large amounts of data.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F128G08EBCDBJ4-37ES:D TR utilizes NAND flash technology to store data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on a floating gate transistor.

During programming, an electrical charge is applied to the floating gate, trapping electrons and altering the threshold voltage of the transistor. This change in threshold voltage represents the stored data. Reading involves measuring the threshold voltage to determine the stored value.

Erasing is performed at the block level, where all cells within a block are simultaneously reset to their initial state. This process involves applying a high voltage