MT29F128G08EBCDBJ4-37ES:D

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: Reliable and efficient data storage solution
Packaging/Quantity: Individually packaged units

Specifications

• Model: MT29F128G08EBCDBJ4-37ES:D
• Capacity: 128GB
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08EBCDBJ4-37ES:D has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write enable
6. CE#: Chip enable
7. RE#: Read enable
8. CLE: Command latch enable
9. ALE: Address latch enable
10. R/B#: Ready/busy status output
11. WP#: Write protect
12. RP#: Reset/power down
13. NC: No connection

Functional Features

• High-speed data transfer rates
• Error correction code (ECC) for data integrity
• Wear-leveling algorithm for extended lifespan
• Bad block management for improved reliability
• Block erase and page program operations
• Internal voltage generation for simplified power supply design

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory (retains data even when power is off) - High endurance and reliability - Compact BGA package for space-saving designs

Disadvantages: - Higher cost compared to other storage options - Limited write endurance compared to some other memory technologies

Working Principles

The MT29F128G08EBCDBJ4-37ES:D NAND flash memory operates based on the principles of floating-gate transistors. It stores data in a series of memory cells, each consisting of a transistor with a floating gate. The presence or absence of an electrical charge on the floating gate determines the stored data value (0 or 1). Data can be written by applying a high voltage to the control gate, which allows electrons to tunnel onto or off the floating gate. Reading data involves sensing the voltage level on the memory cell's bit line.

Detailed Application Field Plans

The MT29F128G08EBCDBJ4-37ES:D NAND flash memory is widely used in various electronic devices that require high-capacity data storage, such as:

1. Solid-state drives (SSDs)
2. Smartphones and tablets
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0B-PCB0: 8GB NAND flash memory, parallel interface.
2. Toshiba TH58NVG6D2FLA89: 64GB NAND flash memory, parallel interface.
3. Micron MT29F256G08CJAAA: 256GB NAND flash memory, parallel interface.
4. Intel JS29F128G08AMCBB: 128GB NAND flash memory, parallel interface.
5. SK Hynix H27U1G8F2BTR: 1GB NAND flash memory, parallel interface.

These alternative models offer different capacities and features to suit various application requirements.

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