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MT29F128G08CECDBJ4-6R:D

MT29F128G08CECDBJ4-6R:D

Product Overview

Category

MT29F128G08CECDBJ4-6R:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F128G08CECDBJ4-6R:D offers a storage capacity of 128 gigabytes (GB), allowing users to store large amounts of data.
  • Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
  • Low power consumption: The MT29F128G08CECDBJ4-6R:D is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
  • RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F128G08CECDBJ4-6R:D is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

  • Storage Capacity: 128 GB
  • Interface: NAND Flash
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SMT
  • Data Transfer Rate: Up to 400 megabytes per second (MB/s)
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08CECDBJ4-6R:D has a standard pin configuration as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip enable
  4. RE: Read enable
  5. WE: Write enable
  6. A0-A18: Address lines
  7. DQ0-DQ15: Data input/output lines
  8. R/B: Ready/busy status
  9. CLE: Command latch enable
  10. ALE: Address latch enable

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

  • Block Erase: The MT29F128G08CECDBJ4-6R:D supports block erase operations, allowing users to erase large chunks of data simultaneously.
  • Page Program: It enables fast and efficient programming of individual memory pages.
  • Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
  • Wear-Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.
  • Bad Block Management: It includes mechanisms to identify and manage bad blocks, preventing data loss and maintaining overall reliability.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast data transfer rate ensures quick read and write operations.
  • Reliable performance ensures data integrity and durability.
  • Low power consumption contributes to energy efficiency.
  • Compact package facilitates integration into various electronic devices.
  • RoHS compliance promotes environmental friendliness.

Disadvantages

  • Relatively higher cost compared to other types of memory.
  • Limited endurance due to program/erase cycle limitations.
  • Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT29F128G08CECDBJ4-6R:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate.

During write operations, data is programmed into the memory cells by applying appropriate voltages to the control lines and storing the desired charge on the floating gates. Reading data involves sensing the voltage levels on the memory cells and converting them back into digital information.

Detailed Application Field Plans

The MT29F128G08CECDBJ4-6R:D finds applications in various electronic devices that require high-capacity data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  • MT29F128G08CECDBJ4-6R:E
  • MT29F128G08CECDBJ4-6R:F
  • MT29F128G08CE

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F128G08CECDBJ4-6R:D v technických řešeních

  1. Question: What is the capacity of the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the interface used by the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D uses a NAND Flash interface.

  3. Question: What is the operating voltage range for the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D operates at a voltage range of 2.7V to 3.6V.

  4. Question: What is the maximum data transfer rate supported by the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D supports a maximum data transfer rate of up to 166 megabytes per second.

  5. Question: Does the MT29F128G08CECDBJ4-6R:D support hardware encryption?
    Answer: No, the MT29F128G08CECDBJ4-6R:D does not have built-in hardware encryption capabilities.

  6. Question: Can the MT29F128G08CECDBJ4-6R:D be used in automotive applications?
    Answer: Yes, the MT29F128G08CECDBJ4-6R:D is suitable for use in automotive applications due to its wide temperature range and high reliability.

  7. Question: What is the endurance rating of the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D has an endurance rating of 3,000 program/erase cycles.

  8. Question: Does the MT29F128G08CECDBJ4-6R:D support wear leveling?
    Answer: Yes, the MT29F128G08CECDBJ4-6R:D supports wear leveling to ensure even distribution of write/erase operations across the memory cells.

  9. Question: Can the MT29F128G08CECDBJ4-6R:D be used in industrial applications?
    Answer: Yes, the MT29F128G08CECDBJ4-6R:D is suitable for use in industrial applications due to its high temperature tolerance and long-term reliability.

  10. Question: What is the package type of the MT29F128G08CECDBJ4-6R:D?
    Answer: The MT29F128G08CECDBJ4-6R:D comes in a BGA (Ball Grid Array) package with 63 balls.