MT29F128G08CBCEBJ4-37ES:E

Product Overview

Category

MT29F128G08CBCEBJ4-37ES:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBCEBJ4-37ES:E offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CBCEBJ4-37ES:E is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBCEBJ4-37ES:E is typically packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08CBCEBJ4-37ES:E has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address lines
7. DQ0-DQ7: Data input/output lines
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Block Erase: The MT29F128G08CBCEBJ4-37ES:E supports block erase operations, allowing for efficient erasure of large data blocks.
• Page Program: This NAND flash memory enables page program operations, facilitating the writing of data in small increments.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and minimize errors during read and write operations.
• Wear Leveling: The wear leveling feature evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance compared to some alternative memory technologies

Working Principles

The MT29F128G08CBCEBJ4-37ES:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a specific voltage to the cell, altering the charge level.

Detailed Application Field Plans

The MT29F128G08CBCEBJ4-37ES:E is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F128G08CBCEBJ4-37ES:D
2. MT29F128G08CBCEBJ4-37ES:F
3. MT29F128G08CBCEBJ4-37ES:G
4. MT29F128G08CBCEBJ4-37ES:H

These alternative models offer similar specifications and functionality to the MT29F128G08CBCEBJ4-37ES:E, providing customers with options based on their specific requirements.

In conclusion, the MT29F128G08CBCEBJ4-37ES:E NAND flash memory offers high storage capacity, fast data transfer rate, and reliable performance. While it has advantages such as low power consumption and a compact package size, it also has limitations in terms of cost and endurance. Nevertheless, its working principles and compatibility with various electronic devices make it a