MT29F128G08CBCCBH6-6R:C

Product Overview

Category

MT29F128G08CBCCBH6-6R:C belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBCCBH6-6R:C offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for applications that require stable data storage.
• Compact package: The MT29F128G08CBCCBH6-6R:C comes in a compact package, allowing for easy integration into various electronic devices.
• Long lifespan: This NAND flash memory has a long lifespan, ensuring durability and longevity in demanding usage scenarios.

Packaging/Quantity

The MT29F128G08CBCCBH6-6R:C is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Detailed Pin Configuration

The MT29F128G08CBCCBH6-6R:C has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground connection
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address lines
7. DQ0-DQ7: Data input/output lines
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Error Correction Code (ECC): The MT29F128G08CBCCBH6-6R:C incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: This NAND flash memory utilizes wear leveling techniques to distribute write operations evenly across memory cells, extending the product's lifespan.
• Bad Block Management: The device includes a mechanism for managing and isolating defective blocks, preventing them from affecting overall performance.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables efficient read and write operations.
• Reliable performance ensures consistent data storage.
• Compact package facilitates easy integration into various devices.
• Long lifespan guarantees durability in demanding usage scenarios.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F128G08CBCCBH6-6R:C operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages, blocks, and planes, allowing for efficient data storage and retrieval. When data is written, an electrical charge is applied to the memory cells, altering their state. To read the data, the charge level of each cell is measured. The device employs various algorithms and techniques to ensure accurate data storage and retrieval.

Detailed Application Field Plans

The MT29F128G08CBCCBH6-6R:C finds applications in a wide range of electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. MT29F128G08CBCCBH7-6R:C: Similar to the MT29F128G08CBCCBH6-6R:C, this model offers the same storage capacity and features but with improved performance characteristics.
2. MT29F256G08CBCCBH6-6R:C: This alternative model provides double the storage capacity, offering 256 GB of storage while maintaining similar characteristics and functionality.
3. MT29F064G08CBCCBH6-6R:C: A lower-capacity option, this model provides 64 GB of storage