MT29F128G08AMCDBJ5-6IT:D TR

Product Overview

Category

The MT29F128G08AMCDBJ5-6IT:D TR belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AMCDBJ5-6IT:D TR offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F128G08AMCDBJ5-6IT:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 128 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F128G08AMCDBJ5-6IT:D TR has a specific pin configuration for proper connectivity. The following table outlines the pin assignments:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6-13 | A0-A7 | Address Inputs | | 14-21 | IO0-IO7 | Data Inputs/Outputs | | 22 | WE# | Write Enable | | 23 | RE# | Read Enable | | 24 | WP# | Write Protect | | 25 | R/B# | Ready/Busy Status |

Functional Features

• High-speed data access: The MT29F128G08AMCDBJ5-6IT:D TR offers fast read and write operations, allowing for efficient data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The device utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes mechanisms to identify and manage bad blocks, ensuring optimal storage efficiency.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited erase/write cycles
• Higher cost compared to other types of memory

Working Principles

The MT29F128G08AMCDBJ5-6IT:D TR operates based on the principles of NAND flash memory technology. It uses a grid of memory cells that store data in a non-volatile manner. These cells are organized into pages and blocks, with each cell capable of storing multiple bits of information. The device utilizes electrical charges to represent data, which can be read, written, or erased using specific voltage levels.

Detailed Application Field Plans

The MT29F128G08AMCDBJ5-6IT:D TR finds applications in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: The NAND flash memory is used to store operating systems, applications, and user data in mobile devices.
2. Solid-state drives (SSDs): It serves as the primary storage medium in SSDs, offering fast and reliable data access for improved system performance.
3. Digital cameras: The device enables the storage of high-resolution photos and videos captured by digital cameras.
4. Industrial automation: It is utilized in industrial control systems and embedded devices for data logging and program storage.

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0D
2. Toshiba THGBMFG8C4LBAIR
3. Mic