MT29F128G08AECBBH6-6IT:B TR

Product Overview

Category

MT29F128G08AECBBH6-6IT:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AECBBH6-6IT:B TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product ensures reliable performance with its robust design and built-in error correction mechanisms.
• Low power consumption: The MT29F128G08AECBBH6-6IT:B TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F128G08AECBBH6-6IT:B TR is typically packaged in a surface-mount package. The exact quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Input/Output
8. R/B: Ready/Busy Status
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Functional Features

• High-speed data transfer: The MT29F128G08AECBBH6-6IT:B TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: This NAND flash memory incorporates error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The product utilizes a wear-leveling algorithm to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: The MT29F128G08AECBBH6-6IT:B TR includes a bad block management system that identifies and isolates defective blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• May be relatively expensive compared to lower-capacity alternatives
• Limited endurance due to the nature of NAND flash memory technology

Working Principles

The MT29F128G08AECBBH6-6IT:B TR operates based on the principles of NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level within the cell. When reading or writing data, electrical signals are applied to specific pins to access the desired memory location.

Detailed Application Field Plans

The MT29F128G08AECBBH6-6IT:B TR is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data.
2. Digital cameras: Enables storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as the primary storage medium in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

1. MT29F128G08AECBBH6-6IT
2. MT29F256G08AECBBH6-6IT
3. MT29F512G08AECBBH6-6IT
4. [Insert additional alternative models]

(Note: The list above includes alternative models with varying storage capacities within the same product series.)

In conclusion, the MT29F128G08AECBBH6-6IT:B TR is a high-capacity NAND flash memory that offers fast data transfer, reliability, and low power consumption. It finds applications in smartphones, tablets, digital cameras, and solid-state drives. While it has advantages such as large storage capacity and compact package size, it may have limitations in terms of cost and endurance.