MT29E512G08CMCCBH7-6ES:C TR

Product Overview

Category

MT29E512G08CMCCBH7-6ES:C TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer: The MT29E512G08CMCCBH7-6ES:C TR offers fast read and write speeds, allowing for efficient data processing.
• Large storage capacity: With a capacity of 512 gigabytes, this NAND flash memory provides ample space for storing large amounts of data.
• Compact package: The product comes in a small form factor, making it suitable for integration into compact electronic devices.
• Reliable performance: The MT29E512G08CMCCBH7-6ES:C TR is designed to deliver consistent and reliable performance over an extended period.

Package and Quantity

The MT29E512G08CMCCBH7-6ES:C TR is packaged in a surface mount technology (SMT) package. It is available in bulk quantities for mass production purposes.

Specifications

• Memory Type: NAND Flash
• Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to 85°C
• Data Transfer Rate: Up to 1.2 Gbps

Pin Configuration

The detailed pin configuration of the MT29E512G08CMCCBH7-6ES:C TR can be found in the product datasheet.

Functional Features

• Error Correction Code (ECC): The product incorporates advanced ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The NAND flash memory utilizes wear leveling techniques to distribute data evenly across memory cells, prolonging the lifespan of the product.
• Bad Block Management: It includes a mechanism for identifying and managing bad blocks, ensuring optimal performance and preventing data loss.

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast data transfer speeds enable quick access to stored information.
• Compact package facilitates integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with older devices that do not support UFS interface.

Working Principles

The MT29E512G08CMCCBH7-6ES:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells are organized into pages and blocks, allowing for efficient read and write operations. The UFS interface enables high-speed data transfer between the memory and the host device.

Application Field Plans

The MT29E512G08CMCCBH7-6ES:C TR is suitable for a wide range of applications, including: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras and camcorders - Automotive infotainment systems - Industrial control systems

Alternative Models

• MT29E1G08ABAEAHC-6IT:A TR
• MT29F2G08ABAEAWP-IT:E TR
• MT29F4G08ABADAWP-IT:D TR
• MT29F8G08ABACAWP-IT:C TR

These alternative models offer varying capacities and features, providing flexibility for different application requirements.

In conclusion, the MT29E512G08CMCCBH7-6ES:C TR is a high-capacity NAND flash memory product designed for reliable data storage in various electronic devices. With its fast data transfer speeds, compact package, and advanced features, it offers significant advantages for applications requiring large storage capacity. However, it may have limitations in terms of compatibility and cost compared to lower-capacity options.