Micron Technology Inc.
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MT29E384G08EBHBBJ4-3ES:B TR

MT29E384G08EBHBBJ4-3ES:B TR

Product Overview

Category

MT29E384G08EBHBBJ4-3ES:B TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

  • High storage capacity: The MT29E384G08EBHBBJ4-3ES:B TR offers a large storage capacity, allowing users to store a significant amount of data.
  • Fast data transfer rate: This memory device provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: With its robust design and advanced technology, the MT29E384G08EBHBBJ4-3ES:B TR ensures reliable and consistent performance.
  • Low power consumption: This memory module is designed to consume minimal power, making it energy-efficient.

Package and Quantity

The MT29E384G08EBHBBJ4-3ES:B TR is typically packaged in a compact and durable casing. It is available in various quantities, depending on the specific requirements of the user or manufacturer.

Specifications

  • Model: MT29E384G08EBHBBJ4-3ES:B TR
  • Capacity: 384GB
  • Type: NAND Flash Memory
  • Interface: SATA III
  • Form Factor: 2.5-inch
  • Operating Voltage: 3.3V
  • Data Transfer Rate: Up to 6 Gbps
  • Operating Temperature: -40°C to 85°C

Detailed Pin Configuration

The pin configuration of the MT29E384G08EBHBBJ4-3ES:B TR is as follows:

| Pin Number | Function | |------------|----------| | 1 | VCC | | 2 | GND | | 3 | Data 0 | | 4 | Data 1 | | 5 | Data 2 | | 6 | Data 3 | | 7 | Data 4 | | 8 | Data 5 | | 9 | Data 6 | | 10 | Data 7 | | 11 | NC | | 12 | NC | | 13 | NC | | 14 | NC | | 15 | NC | | 16 | NC |

Functional Features

  • High-speed data access: The MT29E384G08EBHBBJ4-3ES:B TR offers fast read and write speeds, ensuring efficient data access.
  • Error correction: This memory device incorporates advanced error correction techniques to enhance data integrity and reliability.
  • Wear-leveling algorithm: The built-in wear-leveling algorithm evenly distributes data writes across the memory cells, prolonging the lifespan of the device.
  • Bad block management: The MT29E384G08EBHBBJ4-3ES:B TR includes a bad block management system that identifies and isolates defective memory blocks, preventing data loss.

Advantages

  • Large storage capacity allows for ample data storage.
  • Fast data transfer rate ensures quick access to stored information.
  • Reliable performance ensures consistent operation.
  • Low power consumption contributes to energy efficiency.

Disadvantages

  • Relatively high cost compared to lower-capacity memory devices.
  • Limited compatibility with older devices that do not support SATA III interface.

Working Principles

The MT29E384G08EBHBBJ4-3ES:B TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. When data is written, electrical charges are stored in the memory cells, representing binary information. To read the data, the charges are measured and converted back into digital information.

Detailed Application Field Plans

The MT29E384G08EBHBBJ4-3ES:B TR can be used in various applications, including: 1. Data centers: This memory device is suitable for high-capacity storage requirements in data centers. 2. Enterprise servers: It can be utilized in enterprise-level servers to enhance data processing and storage capabilities. 3. Gaming consoles: The MT29E384G08EBHBBJ4-3ES:B TR can provide ample storage for gaming consoles, allowing users to store large game libraries. 4. High-performance laptops: It is ideal for laptops that require fast and reliable storage for demanding tasks such as video editing and 3D rendering.

Detailed Alternative Models

  1. MT29E384G08EBHBBJ4-3ES:A TR
  2. MT29E384G08EBHBBJ4-3ES:C TR
  3. MT29E384G08EBHBBJ4-3ES

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29E384G08EBHBBJ4-3ES:B TR v technických řešeních

1. What is the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR is a specific model of memory chip manufactured by Micron Technology. It is commonly used in technical solutions that require high-performance and reliable memory storage.

2. What is the capacity of the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR has a capacity of 32 gigabits (4 gigabytes). This means it can store a large amount of data, making it suitable for applications that require significant memory space.

3. What is the speed of the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR operates at a speed of 1600 megabits per second (MT/s). This high-speed performance allows for fast data transfer and efficient processing in technical solutions.

4. What is the voltage requirement for the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR operates at a voltage of 1.35 volts (V). This low voltage requirement helps in reducing power consumption and heat generation, making it energy-efficient.

5. What is the form factor of the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR follows the Small Outline DIMM (SODIMM) form factor. This compact size makes it suitable for applications with space constraints, such as laptops and small form factor devices.

6. What is the operating temperature range of the MT29E384G08EBHBBJ4-3ES:B TR?

The MT29E384G08EBHBBJ4-3ES:B TR has an operating temperature range of -40°C to +85°C. This wide temperature tolerance allows it to function reliably in various environmental conditions.

7. Is the MT29E384G08EBHBBJ4-3ES:B TR compatible with DDR3 or DDR4 memory interfaces?

The MT29E384G08EBHBBJ4-3ES:B TR is compatible with the DDR3 memory interface. It is not compatible with DDR4 memory interfaces, so it is important to ensure compatibility with the target system before implementation.

8. Can the MT29E384G08EBHBBJ4-3ES:B TR be used in server applications?

Yes, the MT29E384G08EBHBBJ4-3ES:B TR can be used in server applications that require high-performance memory solutions. Its capacity and speed make it suitable for handling large amounts of data in server environments.

9. Does the MT29E384G08EBHBBJ4-3ES:B TR support error correction codes (ECC)?

No, the MT29E384G08EBHBBJ4-3ES:B TR does not support error correction codes (ECC). If ECC functionality is required, an alternative memory chip with ECC support should be considered.

10. Are there any specific design considerations when using the MT29E384G08EBHBBJ4-3ES:B TR?

When designing with the MT29E384G08EBHBBJ4-3ES:B TR, it is important to consider factors such as power supply stability, signal integrity, and thermal management. Following the manufacturer's guidelines and best practices will help ensure optimal performance and reliability.