MT28FW01GABA1HPC-0AAT TR

Product Overview

Category

MT28FW01GABA1HPC-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: MT28FW01GABA1HPC-0AAT TR offers a large storage capacity, allowing for the storage of significant amounts of data.
• Fast access speed: This memory device provides quick access to stored data, ensuring efficient performance.

Package

MT28FW01GABA1HPC-0AAT TR comes in a compact package that is designed to be easily integrated into electronic devices. The package is durable and protects the memory device from external factors such as moisture and physical damage.

Essence

The essence of MT28FW01GABA1HPC-0AAT TR lies in its ability to store and retrieve data reliably and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Type: Non-volatile Flash Memory
• Capacity: 1 Gigabit (128 Megabytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The MT28FW01GABA1HPC-0AAT TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• High-speed data transfer: MT28FW01GABA1HPC-0AAT TR supports fast data transfer rates, enabling efficient read and write operations.
• Flexible erase and program operations: This memory device allows for individual sector erasure and programming, providing flexibility in managing data storage.
• Error correction and detection: Built-in error correction and detection mechanisms ensure data integrity and reliability.
• Low power consumption: MT28FW01GABA1HPC-0AAT TR is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access speed
• Non-volatile data retention
• Flexible erase and program operations
• Error correction and detection mechanisms
• Low power consumption

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (erase/program cycles)

Working Principles

MT28FW01GABA1HPC-0AAT TR utilizes flash memory technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The data is stored as electrical charges within these cells, which can be read by applying appropriate voltages. The memory cells are organized into sectors, allowing for efficient management of data storage and retrieval.

Detailed Application Field Plans

MT28FW01GABA1HPC-0AAT TR finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT28FW01GABA1HPC-0AAT TR that offer similar functionality and features include: - AT25SF041: Manufactured by Adesto Technologies - S25FL128SAGMFI001: Manufactured by Cypress Semiconductor - W25Q128JVSIQ: Manufactured by Winbond Electronics

These alternative models provide comparable storage capacity, interface compatibility, and performance characteristics.

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