MT28EW256ABA1HJS-0SIT TR

Product Overview

Category

MT28EW256ABA1HJS-0SIT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: MT28EW256ABA1HJS-0SIT TR offers a large storage capacity, allowing for the storage of significant amounts of data.
• Fast access speed: This memory device provides quick access to stored data, enabling efficient data retrieval and processing.
• Reliable: It has a high level of reliability, ensuring that the stored data remains intact over an extended period.
• Low power consumption: MT28EW256ABA1HJS-0SIT TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The memory device comes in a compact package, allowing for easy integration into various electronic systems.

Packaging/Quantity

MT28EW256ABA1HJS-0SIT TR is typically packaged in a small form factor, such as a surface-mount package (SMT). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Write Endurance: 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT28EW256ABA1HJS-0SIT TR is as follows:

| Pin Name | Function | |----------|----------| | VCC | Power Supply (2.7V - 3.6V) | | GND | Ground | | CS | Chip Select | | SCK | Serial Clock | | SI | Serial Input | | SO | Serial Output | | WP | Write Protect | | HOLD | Hold Input |

Functional Features

MT28EW256ABA1HJS-0SIT TR offers the following functional features:

• Byte-level Read and Write Operations: Allows for efficient manipulation of data stored in the memory.
• Sector Erase: Enables selective erasure of specific memory sectors, enhancing flexibility in data management.
• Write Protection: The WP pin can be used to protect the memory from accidental writes, preventing data corruption.
• Fast SPI Interface: The Serial Peripheral Interface (SPI) provides high-speed data transfer between the memory device and the host system.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access speed
• Low power consumption
• Compact package size
• Reliable data retention

Disadvantages

• Limited write endurance (100,000 cycles)
• Requires an external controller for interfacing with the host system

Working Principles

MT28EW256ABA1HJS-0SIT TR utilizes EEPROM technology for data storage. It employs a floating-gate transistor structure that allows for non-volatile storage of electrical charges. Data can be written to and read from specific memory locations using the SPI interface. The memory cells are organized into sectors, which can be individually erased or written.

Detailed Application Field Plans

MT28EW256ABA1HJS-0SIT TR finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models to MT28EW256ABA1HJS-0SIT TR include: - AT25SF041-SSHD-T by Adesto Technologies - W25Q256JVSIQ by Winbond Electronics - S25FL256SAGMFI011 by Cypress Semiconductor

These alternative models offer similar functionality and specifications, providing options for different design requirements.

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