M36W0R6050T4ZAQE

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
• Package: Integrated circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Memory Type: Flash
• Capacity: 64 megabits (8 megabytes)
• Organization: 8M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Suspend: Yes
• Burst Mode: Yes

Detailed Pin Configuration

The M36W0R6050T4ZAQE chip has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A22: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. BYTE#: Byte/word organization control
9. RESET#: Reset input
10. WP#: Write protect control
11. NC: No connection
12. GND: Ground

Functional Features

• High-speed data transfer
• Low power consumption
• Reliable data retention
• Sector erase and byte programming capabilities
• Built-in error correction code (ECC) for data integrity
• Software and hardware protection mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Non-volatile memory retains data even when power is disconnected - Compact size and lightweight - Suitable for a wide range of electronic devices

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Relatively higher cost compared to other memory technologies - Susceptible to physical damage if mishandled

Working Principles

The M36W0R6050T4ZAQE chip utilizes flash memory technology to store digital information. It consists of a grid of memory cells, each capable of storing a binary value (0 or 1). These cells are organized in a matrix, with rows and columns forming an addressable structure. Data can be written to and read from these cells using electrical signals.

During programming, the memory cells are subjected to high voltage, which alters their internal state and stores the desired data. Erasing the memory involves resetting all cells to a default state. The chip's control circuitry manages the reading, writing, and erasing operations, ensuring accurate data storage and retrieval.

Detailed Application Field Plans

The M36W0R6050T4ZAQE chip finds applications in various electronic devices, including but not limited to: - Mobile phones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• M36W0R6050T4ZS6E: Same specifications, different package (TSOP)
• M36W0R6050T4ZBQE: Same specifications, extended temperature range (-40°C to +105°C)
• M36W0R6050T4ZBAQE: Same specifications, extended temperature range and automotive-grade qualification

These alternative models offer similar functionality and performance, providing flexibility in choosing the most suitable option for specific applications.

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