M29W040B55K6E

Product Overview

Category

M29W040B55K6E belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29W040B55K6E retains stored data even when power is removed.
• High capacity: This device offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The M29W040B55K6E provides quick read and write operations.
• Low power consumption: It consumes minimal power during operation.
• Durable: The device is designed to withstand harsh environmental conditions.

Package

The M29W040B55K6E is available in a compact surface-mount package, making it suitable for integration into small electronic devices.

Essence

The essence of M29W040B55K6E lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W040B55K6E devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 megabits (512 kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29W040B55K6E features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#/BYTE#: Reset/byte enable control input
8. VSS: Ground

Functional Features

• Fast Read and Write Operations: The M29W040B55K6E offers quick access times, allowing for efficient data retrieval and storage.
• Sector Erase Capability: This device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Embedded Algorithms: The M29W040B55K6E incorporates advanced algorithms to ensure reliable data programming and erasure.
• Low Power Consumption: It consumes minimal power during operation, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Durable design
• Low power consumption

Disadvantages

• Limited compatibility with certain older systems
• Higher cost compared to some alternative models

Working Principles

The M29W040B55K6E utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge storage mechanisms to retain information even when power is removed. The device uses an address bus and data bus to read from and write to specific memory locations.

Detailed Application Field Plans

The M29W040B55K6E finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. M29W040B55N6E: Similar to M29W040B55K6E, but with different package options.
2. M29W040B55T6E: Offers extended temperature range for use in extreme environments.
3. M29W040B55R6E: Provides additional security features for data protection.

These alternative models offer similar functionality and characteristics to the M29W040B55K6E, catering to different application requirements.

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