M29F200BT70M6E

Product Overview

Category

The M29F200BT70M6E belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F200BT70M6E retains stored data even when power is removed.
• High capacity: With a storage capacity of 2 megabits (256 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Low power consumption: It consumes minimal power during operation, making it suitable for battery-powered devices.

Package

The M29F200BT70M6E is available in a surface-mount package, which allows for easy integration onto printed circuit boards (PCBs).

Essence

This memory device is essential for storing critical data in electronic systems, enabling reliable and persistent information storage.

Packaging/Quantity

The M29F200BT70M6E is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F200BT70M6E has a total of 32 pins, each serving a specific function. Here is a detailed pin configuration:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE#: Write Enable
4. CE#: Chip Enable
5. OE#: Output Enable
6. VCC: Power Supply (2.7V - 3.6V)
7. GND: Ground

Functional Features

• Read Operation: The device allows for the retrieval of stored data by providing the appropriate address inputs and enabling the output.
• Write Operation: Data can be written to the memory by applying the desired address, data inputs, and enabling the write operation.
• Erase Operation: The M29F200BT70M6E supports sector erase, allowing specific portions of the memory to be erased for rewriting.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity accommodates a significant amount of data.
• Fast access time enables quick data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Parallel interface may limit compatibility with certain systems.

Working Principles

The M29F200BT70M6E utilizes flash memory technology, which stores data in floating-gate transistors. These transistors can retain charge even when power is removed, ensuring non-volatile data storage. The device operates by manipulating voltages on various pins to perform read, write, and erase operations.

Detailed Application Field Plans

The M29F200BT70M6E finds applications in various electronic systems, including: 1. Personal computers 2. Laptops and notebooks 3. Smartphones and tablets 4. Automotive electronics 5. Industrial control systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

1. M29F200BB70N6E
2. M29F200BB70M6E
3. M29F200BB70K6E
4. M29F200BB70N1E
5. M29F200BB70M1E

These alternative models offer similar specifications and functionality to the M29F200BT70M6E, providing options for different application requirements.

Word count: 511 words