M29F200BB70N6

Product Overview

Category

M29F200BB70N6 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is removed.
• High storage capacity: The M29F200BB70N6 has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: Provides quick read and write operations.
• Low power consumption: Designed to minimize energy usage.
• Durable: Can withstand harsh environmental conditions.

Package

The M29F200BB70N6 is available in a standard plastic package, which ensures protection from external factors such as moisture and dust.

Essence

The essence of this product lies in its ability to reliably store and retrieve digital data, making it an essential component in various electronic devices.

Packaging/Quantity

The M29F200BB70N6 is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F200BB70N6 features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#: Ready/Busy status output
8. BYTE#: Byte/word organization control input
9. RESET#: Reset input

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Built-in hardware and software data protection mechanisms
• Low power consumption in standby mode
• Automatic sleep mode to conserve energy when not in use

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss
• Fast access time allows for quick data retrieval
• Durable design withstands harsh environmental conditions
• Efficient sector erase feature simplifies memory management

Disadvantages

• Limited storage capacity compared to other memory devices
• Parallel interface may require additional circuitry for compatibility with certain systems

Working Principles

The M29F200BB70N6 utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information and can be electrically programmed or erased as needed. During read operations, the stored charges are measured to retrieve the stored data.

Detailed Application Field Plans

The M29F200BB70N6 is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. M29F200BT70N6: Similar specifications, but with extended temperature range (-40°C to +105°C).
2. M29F200BB80N6: Higher access time (80 nanoseconds), suitable for applications with less stringent timing requirements.
3. M29F400BB70N6: Double the storage capacity (4 Megabits) while maintaining similar characteristics and pin configuration.

These alternative models offer flexibility in choosing the most suitable device based on specific application requirements.

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